Characterization of Titanium Silicide (TiSi[sub 2]) for Complementary Metal Oxide Semiconductor

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.51 ◽

2007 ◽

Vol 46 (1) ◽

pp. 51-55 ◽

Cited By ~ 16

Author(s):

Genshiro Kawachi ◽

Yoshiaki Nakazaki ◽

Hiroyuki Ogawa ◽

Masayuki Jyumonji ◽

Noritaka Akita ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Performance ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologies

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582957 ◽

1985 ◽

Vol 3 (6) ◽

pp. 1657 ◽

Cited By ~ 51

Author(s):

Roger A. Haken

Keyword(s):

Metal Oxide ◽

Large Scale ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Titanium Silicide ◽

The Self ◽

Oxide Semiconductor

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Characterization of Thermopile Based on Complementary Metal-Oxide-Semiconductor (CMOS) Materials and Post CMOS Micromachining

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4340 ◽

2002 ◽

Vol 41 (Part 1, No. 6B) ◽

pp. 4340-4345 ◽

Cited By ~ 27

Author(s):

Chen-Hsun Du ◽

Chengkuo Lee

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Characterization of High Quality Nitrided Gate Dielectric Films Manufactured in Reduced Pressure Furnace for Ultralarge Scale Integration Complementary Metal Oxide Semiconductor Applications

Journal of The Electrochemical Society ◽

10.1149/1.1838538 ◽

1998 ◽

Vol 145 (5) ◽

pp. 1679-1683 ◽

Cited By ~ 3

Author(s):

Giwan Yoon ◽

Yefim Epstein

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dielectric Films ◽

High Quality ◽

Reduced Pressure ◽

Scale Integration

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Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

Review of Scientific Instruments ◽

10.1063/1.3647223 ◽

2011 ◽

Vol 82 (10) ◽

pp. 103106 ◽

Cited By ~ 2

Author(s):

D. J. Arenas ◽

Dongha Shim ◽

D. I. Koukis ◽

Eunyoung Seok ◽

D. B. Tanner ◽

...

Keyword(s):

Fourier Transform ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Fabrication and characterization of vibration-driven AlN piezoelectric micropower generator compatible with complementary metal-oxide semiconductor process

Journal of Intelligent Material Systems and Structures ◽

10.1177/1045389x14546649 ◽

2014 ◽

Vol 26 (15) ◽

pp. 1971-1979 ◽

Cited By ~ 10

Author(s):

Gwiy-Sang Chung ◽

Byung-Chul Lee

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization ◽

Semiconductor Process ◽

Micropower Generator

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Modeling and characterization of logarithmic complementary metal–oxide–semiconductor active pixel sensors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582291 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1006-1009 ◽

Cited By ~ 4

Author(s):

Muahel Tabet ◽

Nick Tu ◽

Richard Hornsey

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Active Pixel Sensors ◽

Active Pixel ◽

Pixel Sensors

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Characterization of Nickel-Silicide Dependence on the Substrate Dopants for Nanoscale Complementary Metal Oxide Semiconductor Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.91 ◽

2004 ◽

Vol 43 (1) ◽

pp. 91-95 ◽

Cited By ~ 7

Author(s):

Mi-Suk Bae ◽

Hee-Hwan Ji ◽

Hun-Jin Lee ◽

Soon-Young Oh ◽

Bin-Feng Huang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Nickel Silicide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology

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Complementary metal oxide semiconductor compatible fabrication and characterization of parylene-C covered nanofluidic channels with integrated nanoelectrodes

Biomicrofluidics ◽

10.1063/1.3212074 ◽

2009 ◽

Vol 3 (3) ◽

pp. 031101 ◽

Cited By ~ 5

Author(s):

Chih-kuan Tung ◽

Robert Riehn ◽

Robert H. Austin

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Parylene C ◽

Nanofluidic Channels ◽

Fabrication And Characterization

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A Low Parasitic Capacitance Scheme by Thermally Stable Titanium Silicide Technology for High Speed Complementary-Metal-Oxide-Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.480 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 480-485 ◽

Cited By ~ 1

Author(s):

Takehito Yoshida ◽

Shinichi Ogawa ◽

Akio Miyajima ◽

Kousaku Yano

Keyword(s):

Metal Oxide ◽

High Speed ◽

Complementary Metal Oxide Semiconductor ◽

Parasitic Capacitance ◽

Metal Oxide Semiconductor ◽

Titanium Silicide ◽

Oxide Semiconductor ◽

Thermally Stable

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