scholarly journals Spin-Dependent Transport Of Holes In Silicon Quantum Wells Confined By Superconductor Barriers

2010 ◽  
Author(s):  
N. T. Bagraev ◽  
W. Gehlhoff ◽  
L. E. Klyachkin ◽  
A. A. Kudryavtsev ◽  
A. M. Malyarenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport and spin polarization in coupled quantum wells

2008 ◽  
Vol 104 (6) ◽  
pp. 064321
Author(s):  
Genhua Liu ◽  
Yonghai Chen ◽  
Yu Liu ◽  
Caihong Jia ◽  
Zhanguo Wang
Keyword(s):  
Quantum Wells ◽  
Spin Polarization ◽  
Coupled Quantum Wells ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport of holes in silicon quantum wells confined by superconductor barriers

2008 ◽  
Vol 468 (7-10) ◽  
pp. 840-843 ◽  
Author(s):  
Nikolay T. Bagraev ◽  
Wolfgang Gehlhoff ◽  
Leonid E. Klyachkin ◽  
Andrey A. Kudryavtsev ◽  
Anna M. Malyarenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals High Temperature Quantum Kinetic Effects in Silicon Nanosandwiches

2018 ◽  
Vol 52 (4) ◽  
pp. 473
Author(s):  
N.T. Bagraev ◽  
L.E. Klyachkin ◽  
V.S. Khromov ◽  
A.M. Malyarenko ◽  
V.A. Mashkov ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Sandwich Structure ◽  
Quantum Hall ◽  
Electron Interaction ◽  
Semiconductor Quantum Wells ◽  
Spin Dependent Transport ◽  
Composite Bosons ◽  
Kinetic Effects ◽  
Dependent Transport

AbstractThe negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure.

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

scholarly journals Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect Transistors ◽  
First Principles Calculations ◽  
Next Generation ◽  
Strong Response ◽  
The Road ◽  
Spin Dependent Transport ◽  
2D Structure ◽  
Filtering Effect ◽  
Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties

2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Qian Liu ◽  
Yaqiang Tian ◽  
Xiaoping Zheng ◽  
Liansheng Chen ◽  
Yuqing Zhao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

The spin-dependent transport of transition metal encapsulated B40fullerene

RSC Advances ◽  
2016 ◽  
Vol 6 (46) ◽  
pp. 40155-40161 ◽  
Author(s):  
Wei Wang ◽  
Yan-Dong Guo ◽  
Xiao-Hong Yan
Keyword(s):  
Transition Metal ◽  
Metal Atom ◽  
Transition Metal Atom ◽  
Spin Dependent Transport ◽  
Dependent Transport

Two-probe systems of transition metal atom (X)-encapsulated B40fullerene contacted with Au electrodes, where X = Fe, Mn, Ni, and Co.

Spin-dependent transport of trans-polyacetylene in the presence of polarons

2019 ◽  
Vol 475 ◽  
pp. 205-210
Author(s):  
N. Sadeghi ◽  
S.A. Ketabi ◽  
N. Shahtahmasebi ◽  
M.R. Abolhassani
Keyword(s):  
Spin Dependent Transport ◽  
Dependent Transport
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