Analysis of mass transport in an atmospheric pressure remote plasma-enhanced chemical vapor deposition process

2010 ◽  
Vol 107 (2) ◽  
pp. 024909 ◽  
Author(s):  
R. P. Cardoso ◽  
T. Belmonte ◽  
G. Henrion ◽  
T. Gries ◽  
E. Tixhon
Keyword(s):  
Chemical Vapor Deposition ◽  
Mass Transport ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Remote Plasma ◽  
Vapor Deposition Process

The Modeling Routes for the Chemical Vapor Deposition Process

1994 ◽  
Vol 363 ◽  
Author(s):  
M. Pons ◽  
C. Bernard ◽  
H. Rouch ◽  
R. Madar
Keyword(s):  
Chemical Vapor Deposition ◽  
Mass Transport ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solution Procedure ◽  
Chemical Vapor Deposition Process ◽  
Thermochemical Equilibrium ◽  
Reactive Gases ◽  
Vapor Deposition Process

AbstractThe purpose of this article is to present the modeling routes for the chemical vapor deposition process with a special emphasis to mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-x Gex solid solution at 1300 K (system Si-Ge-Cl-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.

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