Conduction mechanisms and 1/fnoise in thick‐film resistors with Pb3Rh7O15and Pb2Ru2O7

1981 ◽  
Vol 52 (6) ◽  
pp. 4128-4134 ◽  
Author(s):  
W. H. de Jeu ◽  
R. W. J. Geuskens ◽  
G. E. Pike
1983 ◽  
Vol 10 (4) ◽  
pp. 285-293 ◽  
Author(s):  
Maria Prudenziati

Though for many decades have we had thick-film resistors (TFRs) with good electrical properties, no well established model for describing their conduction mechanisms has been achieved. However the efforts of some research groups in U.S.A. and Europe in the last years have had success in improving our knowledge of the microstructure and of a large spectrum of electrical properties of TFRs. The available information narrows the field of possibilities for conduction mechanisms in TFRs. Though no conclusive assessment is yet possible, some lines for further progress can be precisely delineated.


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