Oxidation kinetics of TiN thin films

1981 ◽  
Vol 52 (11) ◽  
pp. 6659-6664 ◽  
Author(s):  
M. Wittmer ◽  
J. Noser ◽  
H. Melchior
Keyword(s):  
Thin Films ◽  
Oxidation Kinetics ◽  
Tin Thin Films ◽  
Kinetics Of

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Oxidation kinetics of ZrN thin films

1983 ◽  
Vol 107 (1) ◽  
pp. 111-116 ◽  
Author(s):  
L. Krusin-Elbaum ◽  
M. Wittmer
Keyword(s):  
Thin Films ◽  
Oxidation Kinetics ◽  
Kinetics Of

Oxidation kinetics of nitrogen doped TiO2−δ thin films

2012 ◽  
Vol 14 (37) ◽  
pp. 12930 ◽  
Author(s):  
Jianmin Shi ◽  
Doh-Kwon Lee ◽  
Han-Ill Yoo ◽  
Jürgen Janek ◽  
Klaus-Dieter Becker
Keyword(s):  
Thin Films ◽  
Oxidation Kinetics ◽  
Doped Tio2 ◽  
Nitrogen Doped ◽  
Kinetics Of

Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

1995 ◽  
Vol 410 ◽  
Author(s):  
Gerald T. Kraus ◽  
Cory S. Oldweiler ◽  
Emmanuel P. Giannelis
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxidation Kinetics ◽  
Sol Gel ◽  
Tantalum Nitride ◽  
Sputtered Films ◽  
Parabolic Oxidation ◽  
Sol Gel Films ◽  
Kinetics Of

ABSTRACTTantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

Oxidation kinetics of TiN layers: Exposed and beneath Pt thin films

1997 ◽  
Vol 70 (6) ◽  
pp. 711-713 ◽  
Author(s):  
Paul C. McIntyre ◽  
Scott R. Summerfelt ◽  
Carl J. Maggiore
Keyword(s):  
Thin Films ◽  
Oxidation Kinetics ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document