Oxidation kinetics of nitrogen doped TiO2−δ thin films

2012 ◽  
Vol 14 (37) ◽  
pp. 12930 ◽  
Author(s):  
Jianmin Shi ◽  
Doh-Kwon Lee ◽  
Han-Ill Yoo ◽  
Jürgen Janek ◽  
Klaus-Dieter Becker
2007 ◽  
Vol 601 (18) ◽  
pp. 4515-4520 ◽  
Author(s):  
D. Mardare ◽  
D. Luca ◽  
C.-M. Teodorescu ◽  
D. Macovei

1981 ◽  
Vol 52 (11) ◽  
pp. 6659-6664 ◽  
Author(s):  
M. Wittmer ◽  
J. Noser ◽  
H. Melchior

2021 ◽  
Vol 02 ◽  
Author(s):  
Corrado Garlisi ◽  
Ahmed Yusuf ◽  
Giovanni Palmisano

Background: Microreactor devices have attracted increasing attention over the last years due to their high surface-to-volume ratio which ensures a high heat and mass transfer, short molecular diffusion distance and greater spatial illumination homogeneity compared to traditional reactors. Objective: The aim of this study was to model the kinetics of photodegradation of 2-propanol over TiO2-based thin films in a gas-phase batch-reactor and simulate their performance in a microreactor device. Methods: The reaction was carried out in a gas-phase batch-reactor assessing the reactivity of a single-layer nitrogen (N)-doped TiO2 and a bilayer consisting of N-doped TiO2 as a bottom layer and copper (Cu)-doped TiO2 as a top layer. The kinetics of the photocatalytic process was modelled by Langmuir–Hinshelwood (LH) model. The constants obtained from LH model were used to simulate the performance of the photocatalysts in a microreactor operating in a continuous flow mode and investigating the effect of the volumetric flow rate (Q), initial concentration of pollutant (Co), number of microchannels (n) and microchannel length (l) on the photodegradation of 2-propanol. Results: N-Cu-TiO2 exhibited a higher reactivity but a lower to adsorption ability towards the target pollutant compared to N-TiO2. To maximize and leverage the advantages of microreactor, optimal operating conditions for a continuous flow mode, at steady state, should be moderately low Q and Co, long l and moderate n that minimizes flow maldistribution in parallel. Conclusion: The findings in this work could serve as a basis to design and fabricate efficient microreactors for the removal of VOC in air purification applications.


1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.


2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.


Catalysts ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 326 ◽  
Author(s):  
Peng Sun ◽  
Jun Zhang ◽  
Wenxiu Liu ◽  
Qi Wang ◽  
Wenbin Cao

In this paper, the Langmuir-Hinshelwood (L-H) model has been used to investigate the kinetics of photodegradation of gaseous benzene by nitrogen-doped TiO2 (N-TiO2) at 25 °C under visible light irradiation. Experimental results show that the photoreaction coefficient kpm increased from 3.992 × 10−6 mol·kg−1·s−1 to 11.55 × 10−6 mol·kg−1·s−1 along with increasing illumination intensity. However, the adsorption equilibrium constant KL decreased from 1139 to 597 m3·mol−1 when the illumination intensity increased from 36.7 × 104 lx to 75.1 × 104 lx, whereas it was 2761 m3·mol−1 in the absence of light. This is contrary to the fact that KL should be a constant if the temperature was fixed. This phenomenon can be attributed to the breaking of the adsorption-desorption equilibrium by photocatalytically decomposition. To compensate for the disequilibrium of the adsorption-desorption process, photoreaction coefficient kpm was introduced to the expression of KL and the compensation form was denoted as Km. KL is an indicator of the adsorption capacity of TiO2 while Km is only an indicator of the coverage ratio of TiO2 surface. The modified L-H model has been experimentally verified so it is expected to be used to predict the kinetics of the photocatalytic degradation of gaseous benzene.


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