Generalized Hall‐effect measurement geometries and limitations of van der Pauw‐type Hall‐effect measurements

1981 ◽  
Vol 52 (1) ◽  
pp. 269-274 ◽  
Author(s):  
Daniel M. Boerger ◽  
John J. Kramer ◽  
Larry D. Partain
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Hall Effect Measurements ◽  
Van Der Pauw

Theory and Realization of a Two-Layer Hall Effect Measurement Concept for Characterization of Epitaxial and Implanted Layers of SiC

1996 ◽  
Vol 423 ◽  
Author(s):  
Adolf Schöner ◽  
Kurt Rottner ◽  
Nils Nordell
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurement ◽  
Thin Layers ◽  
Electrical Insulation ◽  
Effect Measurement ◽  
Pn Junction ◽  
Hall Effect Measurements ◽  
Measurement Concept ◽  
Van Der Pauw ◽  
Cv Measurements

AbstractEpitaxial and implanted layers are generally characterized by Hall effect measurements using a pn-junction as electrical insulation of the layer from the substrate. Due to defects, low doping concentrations or thin layers the resistivity of epitaxial or implanted layers is comparable to the resistivity of the pn-junction and the substrate. This results in inefficient electrical insulation between both regions. To be able to determine the properties of epitaxial or implanted layers even in the case of substantial leakage current we developed a two-layer Hall effect measurement concept. This concept is based on the conventional van der Pauw technique applied to the layer and the substrate separately. In addition the current-voltage characteristic of the pn-junction is measured and modeled in the analysis as an ohmic resistor.This two-layer concept is applied to epitaxial grown SiC and the results are compared with conventional van der Pauw technique. In addition both techniques are compared with the results of capacitance-voltage (CV) measurements and secondary ion mass spectroscopy (SIMS).

scholarly journals Molecular detection by liquid gated Hall effect measurements of graphene

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 930-935 ◽  
Author(s):  
Hualin Zhan ◽  
Jiri Cervenka ◽  
Steven Prawer ◽  
David J. Garrett
Keyword(s):  
Hall Effect ◽  
Sheet Resistance ◽  
Hall Coefficient ◽  
Molecular Detection ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Hall Effect Measurements

A liquid gated Hall effect measurement of graphene shows that the Hall coefficient is more sensitive to the change of l-histidine concentration in the pM range than the sheet resistance.

scholarly journals Investigation of electrical characteristics of different ceramic samples using Hall effect measurement

2008 ◽  
Vol 2 (1) ◽  
pp. 33-37 ◽  
Author(s):  
Radomir Dzakula ◽  
Slavica Savic ◽  
Goran Stojanovic
Keyword(s):  
Hall Effect ◽  
Point Contact ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Electrical Characteristics ◽  
Ceramic Samples ◽  
Current Voltage ◽  
Different Types ◽  
Van Der Pauw ◽  
C 50

Hall effect is a very popular technique and is widely used to quantify important electrical parameters such as carrier concentration, resistivity, mobility and Hall coefficient of different types of samples. In this paper, electrical characteristics of three ceramic samples will be analyzed using a Hall effect measurement system (Ecopia, HMS-3000), which is based on the van der Pauw method. Measured results for mobility and electrical resistivity at three temperatures (25?C, 50?C and 80?C) will be presented. Current-voltage and current-resistance dependence between terminals of four point contact of different samples will be also demonstrated.

scholarly journals Microwave Hall effect measurement for materials in the skin depth region

2021 ◽  
Vol 129 (1) ◽  
pp. 015102
Author(s):  
Ryo Ogawa ◽  
Tatsunori Okada ◽  
Hideyuki Takahashi ◽  
Fuyuki Nabeshima ◽  
Atsutaka Maeda
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurement ◽  
Skin Depth ◽  
Effect Measurement

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

1999 ◽  
Vol 14 (7) ◽  
pp. 2778-2782 ◽  
Author(s):  
M. S. Han ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
Ftir Spectra ◽  
Epitaxial Layers ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Vacancy Defects ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Transmission Measurements ◽  
Van Der Pauw

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

scholarly journals The Hall effect measurement in the high resistance In2O3-ZnO polycrystalline films

2009 ◽  
Vol 34 (4) ◽  
pp. 755-757 ◽  
Author(s):  
K. Yamada ◽  
T. Yamaguchi ◽  
N. Kokubo ◽  
B. Shinokazi ◽  
K. Yano ◽  
...  
Keyword(s):  
Hall Effect ◽  
High Resistance ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Polycrystalline Films

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

In situ Hall effect measurement on diamond anvil cell under high pressure

2010 ◽  
Vol 81 (11) ◽  
pp. 115101 ◽  
Author(s):  
Tingjing Hu ◽  
Xiaoyan Cui ◽  
Yang Gao ◽  
Yonghao Han ◽  
Cailong Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
Hall Effect ◽  
Diamond Anvil Cell ◽  
Hall Effect Measurement ◽  
Effect Measurement ◽  
Diamond Anvil
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