Unipolar resistive switching effect in YMn1−δO3 thin films

2010 ◽  
Vol 96 (1) ◽  
pp. 012103 ◽  
Author(s):  
Z. B. Yan ◽  
S. Z. Li ◽  
K. F. Wang ◽  
J.-M. Liu
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Effect ◽  
Unipolar Resistive Switching ◽  
Resistive Switching Effect

Unipolar resistive switching effect and mechanism of solution-processed spinel Co3O4 thin films

2016 ◽  
Vol 103 ◽  
pp. 230-235 ◽  
Author(s):  
Wei Hu ◽  
Lilan Zou ◽  
Xiaogang Lin ◽  
Chao Gao ◽  
Yongcai Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Effect ◽  
Solution Processed ◽  
Unipolar Resistive Switching ◽  
Resistive Switching Effect

scholarly journals Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films

2012 ◽  
Vol 61 (10) ◽  
pp. 107703
Author(s):  
Zhang Pei-Jian ◽  
Meng Yang ◽  
Liu Zi-Yu ◽  
Pan Xin-Yu ◽  
Liang Xue-Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Effect ◽  
Dislocation Distribution ◽  
Resistive Switching Effect

Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

2011 ◽  
Vol 1330 ◽  
Author(s):  
Stefan Tappertzhofen ◽  
Marek Hempel ◽  
Ilia Valov ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Ion Transport ◽  
Resistive Switching ◽  
Metal Ion ◽  
Switching Behavior ◽  
Switching Effect ◽  
Proton Mobility ◽  
Metal Ion Transport ◽  
The Impact ◽  
Resistive Switching Effect

ABSTRACTSilicon dioxide based Electrochemical Metallization (ECM) cells were intensively studied as a promising candidate for CMOS compatible non-volatile memory devices. The resistance of ECM cells can be switched between a high resistive (OFF) state and a low resistive (ON) state by applying a sufficient voltage or current pulse. This resistance transition is attributed to the formation and rupture of a few nanometers in diameter metallic filament. However, the metal ion transport which is believed to be responsible for the filamentary switching mechanism is not understood in detail. In case of SiO2 we suppose protons or humidity may enhance the metal ion transport.In this work we report our studies on the proton incorporation in amorphous SiO2 thin films focused on the impact of hydrogen and humidity on the resistive switching effect. The switching behavior was analyzed by current-voltage measurements performed at different ambient conditions. The incorporation of hydrogen has been confirmed by Time-of-Flight Secondary-Ion-Mass-Spectroscopy (ToF-SIMS). The results led to an expansion of the defect model proposed in the literature.

Influence of top electrode on resistive switching effect of chitosan thin films

2019 ◽  
Vol 34 (23) ◽  
pp. 3899-3906 ◽  
Author(s):  
Kim My Tran ◽  
Dinh Phuc Do ◽  
Kieu Hanh Ta Thi ◽  
Ngoc Kim Pham
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Effect ◽  
Image Position ◽  
Resistive Switching Effect

Abstract

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