The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

2009 ◽  
Vol 95 (1) ◽  
pp. 013109 ◽  
Author(s):  
Lin Yang ◽  
Carsten Kuegeler ◽  
Krzysztof Szot ◽  
Andreas Ruediger ◽  
Rainer Waser
2012 ◽  
Vol 11 (04) ◽  
pp. 1240025
Author(s):  
MATHIEU MORETTI ◽  
MISCHA NICKLAUS ◽  
CHRISTIAN NAUENHEIM ◽  
ANDREAS RUEDIGER

We report on a scanning probe investigation of the resistive switching behavior of TiO2 thin films as a function of an external bias voltage. Our initial conductive atomic force microscopy scans (c-AFM) on 30 nm thick films of sputtered TiO2 confirm the Ron–Roff ratio of approximately 4:1 reported in literature. After a tapping mode scan that compacts this layer by approximately 3%, a subsequent c-AFM scan reveals that the resistance in the compacted region has increased by a factor of 40 while the Ron–Roff ratio is only affected for small bias voltages.


2011 ◽  
Vol 5 (10-11) ◽  
pp. 373-375 ◽  
Author(s):  
Martin Ledinský ◽  
Antonín Fejfar ◽  
Aliaksei Vetushka ◽  
Jiří Stuchlík ◽  
Bohuslav Rezek ◽  
...  

2007 ◽  
Vol 90 (23) ◽  
pp. 232901 ◽  
Author(s):  
O. Bierwagen ◽  
L. Geelhaar ◽  
X. Gay ◽  
M. Piešiņš ◽  
H. Riechert ◽  
...  

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