Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy

1980 ◽  
Vol 51 (10) ◽  
pp. 5438 ◽  
Author(s):  
Shigeo Fujita ◽  
S.M. Bedair ◽  
M.A. Littlejohn ◽  
J.R. Hauser
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
P Type

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Two methods for characterizing the electrical properties of InAsSb film grown by liquid phase epitaxy

2015 ◽  
Author(s):  
Yingfei Lv ◽  
Shuhong Hu ◽  
Yonggang Xu ◽  
Yang Wang ◽  
Guolin Yu ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy

scholarly journals Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs

1993 ◽  
Vol 46 (2) ◽  
pp. 317 ◽  
Author(s):  
KSA Butcher ◽  
D Alexiev ◽  
TL Tansley
Keyword(s):  
Electron Beam ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
High Purity ◽  
Minority Carrier ◽  
Induced Current ◽  
Carrier Diffusion ◽  
Nuclear Science ◽  
Electron Beam Induced Current ◽  
P Type

Measurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current (EBIC) technique. The GaAs material was grown by liquid phase epitaxy (LPE) at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for high purity p-type and n-type LPE-GaAs samples were observed to be longer than any previously reported.

Electrical Properties under Magnetic Field of YBa2Cu3O x Films Grown by Liquid Phase Epitaxy Method

1998 ◽  
pp. 1029-1032
Author(s):  
Kenji Hashimoto ◽  
Sadahiko Miura ◽  
Toshiaki Takagi ◽  
Jian-Guo Wen ◽  
Naoki Koshizuka ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy

Growth of High Quality Lwir Films by Liquid Phase Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
Dipankar Chandra
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
Substrate Surface ◽  
Electrical Performance ◽  
Cdznte Substrate ◽  
Long Wavelength ◽  
Indium Doping ◽  
Dislocation Densities ◽  
Infra Red

ABSTRACTGrowth of long wavelength infra-red mercury cadmium telluride films by liquid phase epitaxy has usually yielded films of inferior electrical properties as evidenced by Hall mobilities lower than theoretical values by factors of 5 or more at 77°K. In addition the Hall behavior over the entire temperature range did not follow classical patterns. A systematic series of investigations was conducted to improve the electrical performance of these films by four methods: i) growth of HgCdZnTe films, where a portion of the cadmium was replaced by zinc, ii) growth at temperatures > 550°C, iii) growth at a slow rate on a CdZnTe substrate following ‘Cleaning’ in the melt of the substrate surface and iv) doping the film by controlled levels of indium. The first method did not lead to any improvements in the Hall behavior. In addition, the films grown displayed varying dislocation densities. The second method led to a small but definite increase in the yield of non-anomalous or classical films (5%). The third method yielded films with classical or non-anomalous Hall behavior about 20% of the time. The last method consistently led to films with classical Hall behavior. This was accomplished with indium doping levels at 1.5× 1014/cm3. Preliminary data indicate that it will be possible to go to still lower doping levels while maintaining classical Hall behavior. The improvement in electrical properties of these epifilms can be attributed to the reduction or elimination of type inhomogeneities known to degrade Hall mobilities in films grown by liquid phase epitaxy.

Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy

1980 ◽  
Vol 23 (8) ◽  
pp. 839-844 ◽  
Author(s):  
S.B. Phatak ◽  
S.M. Bedair ◽  
Shigeo Fujita
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy
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