Measurement of diffusion length in CuInSe2 and CdS by the electron beam induced current method

1980 ◽  
Vol 51 (10) ◽  
pp. 5375 ◽  
Author(s):  
J. Piekoszewski ◽  
L. Castaner ◽  
J. J. Loferski ◽  
J. Beall ◽  
W. Giriat
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Current Method ◽  
Induced Current ◽  
Electron Beam Induced Current

Recombination Processes in 4H-SiC pn Structures

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Diffusion Length ◽  
Induced Current ◽  
Donor Concentration ◽  
Reverse Voltage ◽  
Recombination Processes ◽  
Electron Beam Induced Current ◽  
Switching Characteristics ◽  
Hole Diffusion Length

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

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