Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

2009 ◽  
Vol 95 (21) ◽  
pp. 212105 ◽  
Author(s):  
W. B. Chen ◽  
Albert Chin
Keyword(s):  
Metal Oxide ◽  
Interfacial Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Device Property

1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

2008 ◽  
Vol 92 (17) ◽  
pp. 172904 ◽  
Author(s):  
K. H. Shiu ◽  
T. H. Chiang ◽  
P. Chang ◽  
L. T. Tung ◽  
M. Hong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness

Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation

2013 ◽  
Vol 22 (6) ◽  
pp. 067701 ◽  
Author(s):  
Jia-Bao Sun ◽  
Zhou-Wei Yang ◽  
Yang Geng ◽  
Hong-Liang Lu ◽  
Wang-Ran Wu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K
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