1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

K. H. Shiu; T. H. Chiang; P. Chang; L. T. Tung; M. Hong; J. Kwo; W. Tsai

doi:10.1063/1.2918835

1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

Applied Physics Letters ◽

10.1063/1.2918835 ◽

2008 ◽

Vol 92 (17) ◽

pp. 172904 ◽

Cited By ~ 44

Author(s):

K. H. Shiu ◽

T. H. Chiang ◽

P. Chang ◽

L. T. Tung ◽

M. Hong ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Cited By ~ 22

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

Applied Physics Letters ◽

10.1063/1.4907728 ◽

2015 ◽

Vol 106 (5) ◽

pp. 053508 ◽

Cited By ~ 7

Author(s):

Chao-Yi Wu ◽

Ching-Heng Hsieh ◽

Ching-Wei Lee ◽

Yung-Hsien Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Equivalent Oxide Thickness

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Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flat-band voltage in metal oxide semiconductor devices

Microelectronic Engineering ◽

10.1016/j.mee.2013.03.056 ◽

2013 ◽

Vol 109 ◽

pp. 160-162 ◽

Cited By ~ 15

Author(s):

Seok-Hee Lee ◽

Rino Choi ◽

Changhwan Choi

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flat Band ◽

Flat Band Voltage ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

Tin Metal

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Dual Metal/High-kGate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.084201 ◽

2011 ◽

Vol 50 (8R) ◽

pp. 084201

Author(s):

Yoshiaki Kikuchi ◽

Hitoshi Wakabayashi ◽

Masanori Tsukamoto ◽

Naoki Nagashima

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Effect Transistor ◽

Dual Metal

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Equivalent oxide thickness scaling of Al2O3/Ge metal—oxide—semiconductor capacitors with ozone post oxidation

Chinese Physics B ◽

10.1088/1674-1056/22/6/067701 ◽

2013 ◽

Vol 22 (6) ◽

pp. 067701 ◽

Cited By ~ 10

Author(s):

Jia-Bao Sun ◽

Zhou-Wei Yang ◽

Yang Geng ◽

Hong-Liang Lu ◽

Wang-Ran Wu ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied Physics Letters ◽

10.1063/1.3617436 ◽

2011 ◽

Vol 99 (4) ◽

pp. 042908 ◽

Cited By ~ 47

Author(s):

L. K. Chu ◽

C. Merckling ◽

A. Alian ◽

J. Dekoster ◽

J. Kwo ◽

...

Keyword(s):

Metal Oxide ◽

Molecular Beam ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

ECS Transactions ◽

10.1149/1.2779579 ◽

2019 ◽

Vol 11 (4) ◽

pp. 431-439 ◽

Cited By ~ 12

Author(s):

Rama Kambhampati ◽

Sergei Koveshnikov ◽

Vadim Tokranov ◽

M. Yakimov ◽

R Moore ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Gate Stack ◽

In Situ Deposition ◽

High K

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Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

Applied Physics Letters ◽

10.1063/1.3265947 ◽

2009 ◽

Vol 95 (21) ◽

pp. 212105 ◽

Cited By ~ 19

Author(s):

W. B. Chen ◽

Albert Chin

Keyword(s):

Metal Oxide ◽

Interfacial Layer ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Device Property

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Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb2O3-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness

Applied Physics Letters ◽

10.1063/1.4902119 ◽

2014 ◽

Vol 105 (20) ◽

pp. 203508 ◽

Cited By ~ 8

Author(s):

Ching-Wei Lee ◽

Yung-Hsien Wu ◽

Ching-Heng Hsieh ◽

Chia-Chun Lin

Keyword(s):

Metal Oxide ◽

Solid Phase ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solid Phase Epitaxy ◽

Equivalent Oxide Thickness

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