Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence

2009 ◽  
Vol 95 (20) ◽  
pp. 203110 ◽  
Author(s):  
Christopher G. Bailey ◽  
Seth M. Hubbard ◽  
David V. Forbes ◽  
Ryne P. Raffaelle
Keyword(s):  
High Resolution ◽  
Quantum Dot ◽  
Layer Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Quantum Dot

High‐resolution x‐ray diffraction of self‐organized InGaAs/GaAs quantum dot structures

1996 ◽  
Vol 68 (6) ◽  
pp. 785-787 ◽  
Author(s):  
A. Krost ◽  
F. Heinrichsdorff ◽  
D. Bimberg ◽  
A. Darhuber ◽  
G. Bauer
Keyword(s):  
High Resolution ◽  
Quantum Dot ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized ◽  
Gaas Quantum Dot

Investigation of indium distribution in InGaAs∕GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering

2006 ◽  
Vol 99 (2) ◽  
pp. 023517 ◽  
Author(s):  
Yu. I. Mazur ◽  
Zh. M. Wang ◽  
G. J. Salamo ◽  
V. V. Strelchuk ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Dot ◽  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Quantum Dot

Quantitative analysis of the quantum dot superlattice by high-resolution x-ray diffraction

2013 ◽  
Vol 113 (16) ◽  
pp. 163506 ◽  
Author(s):  
N. N. Faleev ◽  
C. Honsberg ◽  
V. I. Punegov
Keyword(s):  
Quantitative Analysis ◽  
High Resolution ◽  
Quantum Dot ◽  
X Ray Diffraction ◽  
X Ray

Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

2002 ◽  
Vol 81 (3) ◽  
pp. 448-450 ◽  
Author(s):  
T. U. Schülli ◽  
M. Sztucki ◽  
V. Chamard ◽  
T. H. Metzger ◽  
D. Schuh
Keyword(s):  
Quantum Dot ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Quantum Dot

High-Resolution X-Ray Characterization of Amorphous Semiconductor Multilayers

1989 ◽  
Vol 149 ◽  
Author(s):  
P. D. Persans ◽  
A. F. Ruppert ◽  
B. Abeles ◽  
G. Hughes ◽  
K. S. Liang
Keyword(s):  
Surface Roughness ◽  
High Resolution ◽  
Layer Thickness ◽  
Dynamical Theory ◽  
Amorphous Semiconductor ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTWe discuss high-resolution x-ray diffraction measurements on a-Si:H/a-Ge:H periodic amorphous multilayers. Analysis of the data using the dynamical theory yields information on layer thicknesses and densities, interface and surface roughness, and structural defects such as layer thickness fluctuations.

scholarly journals X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

2000 ◽  
Vol 77 (14) ◽  
pp. 2130-2132 ◽  
Author(s):  
S. J. Xu ◽  
H. Wang ◽  
Q. Li ◽  
M. H. Xie ◽  
X. C. Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled ◽  
Gaas Quantum Dot

High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE

1996 ◽  
Vol 449 ◽  
Author(s):  
M.S. Goorsky ◽  
A.Y. Polyakov ◽  
M. Skowronski ◽  
M. Shin ◽  
D.W. Greve
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Layer Thickness ◽  
Vapor Phase ◽  
Edge Dislocation ◽  
Initial Level ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Perfection ◽  
Misorientation Angles

ABSTRACTWe demonstrate the use of triple axis diffraction measurements, including Φ scans (in which the sample is rotated about an axis perpendicular to its surface) to assess the crystal perfection of wurtzite GaN layers on sapphire grown using different pre-nitridation growth treatments by or-ganometallic vapor phase epitaxy. The Φ scans determine the in-plane misorientation angles between the crystallites and hence provide information on the edge dislocation density. Using glancing incidence (1014) and (1015) reflections, we determined that the misorientation among the GaN crystallites decreases with increasing layer thickness and that the pre-nitridation conditions control the initial level of misorientation. Triple axis ω and ω-2θ scans around the (0002) reflection did not show a systematic trend with increasing layer thickness. However, layers grown without a pre-nitridation step tended to exhibit higher values of both mosaic spread and strain. The appropriate asymmetric reflections for GaN-based Φ scan measurements are determined using structure factor calculations, which are presented here.

In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution

2011 ◽  
Vol 98 (21) ◽  
pp. 213105 ◽  
Author(s):  
M. Dubslaff ◽  
M. Hanke ◽  
M. Burghammer ◽  
S. Schöder ◽  
R. Hoppe ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Dot ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quantum Dot Molecules
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