scholarly journals X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

2000 ◽  
Vol 77 (14) ◽  
pp. 2130-2132 ◽  
Author(s):  
S. J. Xu ◽  
H. Wang ◽  
Q. Li ◽  
M. H. Xie ◽  
X. C. Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled ◽  
Gaas Quantum Dot

scholarly journals Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

1997 ◽  
Vol 306 (2) ◽  
pp. 198-204 ◽  
Author(s):  
A.A. Darhuber ◽  
J. Stangl ◽  
V. Holy ◽  
G. Bauer ◽  
A. Krost ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Structural Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

2002 ◽  
Vol 81 (3) ◽  
pp. 448-450 ◽  
Author(s):  
T. U. Schülli ◽  
M. Sztucki ◽  
V. Chamard ◽  
T. H. Metzger ◽  
D. Schuh
Keyword(s):  
Quantum Dot ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Quantum Dot

Structural characterization of self-assembled semiconductor islands by three-dimensional X-ray diffraction mapping in reciprocal space

2008 ◽  
Vol 516 (22) ◽  
pp. 8022-8028 ◽  
Author(s):  
V. Holý ◽  
K. Mundboth ◽  
C. Mokuta ◽  
T.H. Metzger ◽  
J. Stangl ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Three Dimensional ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence

2009 ◽  
Vol 95 (20) ◽  
pp. 203110 ◽  
Author(s):  
Christopher G. Bailey ◽  
Seth M. Hubbard ◽  
David V. Forbes ◽  
Ryne P. Raffaelle
Keyword(s):  
High Resolution ◽  
Quantum Dot ◽  
Layer Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Quantum Dot

Structural and Optical Characterization of ZnO and Glucose Capped ZnO Nanoparticles

2018 ◽  
Vol 21 (1) ◽  
pp. 001-005 ◽  
Author(s):  
A. Dhanalakshmi ◽  
S. Thanikaikarasan ◽  
B. Natarajan ◽  
V. Ramadas ◽  
T. Mahalingam ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Spectroscopic Analysis ◽  
Optical Characterization ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infrared Spectroscopic Analysis ◽  
Structure Surface ◽  
Chemical Reaction Method

Zinc Oxide and Glucose capped Zinc Oxide nanoparticles have been prepared using modified chemical reaction method. X-ray diffraction analysis showed that the prepared samples possess polycrystalline nature with hexagonal structure. Surface morphology has been analyzed using scanning electron microscopy. The estimated value of band gap was found to be 3.41 and 3.87 eV for Zinc Oxide and Glucose capped ZnO respectively. Fourier Transform Infrared spectroscopic analysis has been carried out to find the chemical bond and elemental composition present in Zinc Oxide and Glucose capped Zinc Oxide.

Comprehensive structural and optical characterization of AlAs/GaAs distributed Bragg reflector

2019 ◽  
Vol 33 (08) ◽  
pp. 1950054
Author(s):  
B. O. Alaydin ◽  
E. S. Tuzemen ◽  
D. Altun ◽  
S. Elagoz
Keyword(s):  
High Resolution ◽  
Penetration Depth ◽  
Optical Characterization ◽  
Bragg Reflector ◽  
High Angle ◽  
X Ray Diffraction ◽  
Distributed Bragg Reflector ◽  
X Ray ◽  
Dynamical Simulations

30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements and dynamical simulations have been done for (002), (004) and (006) planes to determine strain and thickness of AlAs and GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured for same planes and also for (224) plane to find out tilt and relaxation of the DBR stack. Relaxation is not observed and it is confirmed with symmetric in-plane (400) Theta/2-Theta and RSM measurements. This is a first study in the literature according to the best of our knowledge. Finally, we have shown sensitivity of high angle diffraction planes to disorders in crystal. Angle-dependent reflectivity simulations have been also done and compared with measurements. 99.99% reflectivity is obtained with 99.5 nm stop bandwidth and 482.7 nm penetration depth.

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