High‐temperature electron mobility in ZnSe : Al and ZnSe : As

1979 ◽  
Vol 50 (6) ◽  
pp. 4208-4211 ◽  
Author(s):  
A. K. Ray ◽  
F. A. Kröger
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
Temperature Electron

Conductivity Anisotropy in Epitaxial 6H and 4H Sic

1994 ◽  
Vol 339 ◽  
Author(s):  
William J. Schaffer ◽  
G. H. Negley ◽  
K. G. Irvine ◽  
J. W. Palmour
Keyword(s):  
High Temperature ◽  
Hall Mobility ◽  
Electron Mobility ◽  
Mobility Ratio ◽  
Apparent Temperature ◽  
Donor Level ◽  
Conductivity Anisotropy ◽  
High Quality ◽  
Total Impurity ◽  
Temperature Electron

ABSTRACTA measure of the electron mobility anisotropy in n-type 4H and 6H-SiC has been obtained using the Hall effect over the temperature range 80K<T<600K. Hall mobility and resistivity data are collected from appropriately oriented bar patterns fabricated into high quality epitaxial material grown on (1100) or (1120)surfaces having total impurity concentrations 1017-1018 cm-3. The observed mobility ratio for 4H is μ[1120]/[0001] and is independent of temperature. For 6H, the ratio μ[1100]/[0001] decreases from ∼6.2 at 80K to ∼5.0 at 150K and is essentially constant (∼4.8) above 200K. A donor level near 0.6 eV is occasionally observed in 4H which reduces the high temperature electron mobility and introduces an apparent temperature dependence to the mobility ratio if nonuniformly distributed.

Low‐temperature electron mobility in InSb

1977 ◽  
Vol 48 (8) ◽  
pp. 3621-3622 ◽  
Author(s):  
B. R. Nag ◽  
G. M. Dutta
Keyword(s):  
Low Temperature ◽  
Electron Mobility ◽  
Temperature Electron

von Weizsäcker coefficient for high-temperature electron plasmas

1991 ◽  
Vol 43 (12) ◽  
pp. 7077-7078
Author(s):  
I. Nagy ◽  
A. Arnau ◽  
P. M. Echenique
Keyword(s):  
High Temperature ◽  
Electron Plasmas ◽  
Temperature Electron

InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance

2018 ◽  
Vol 11 (9) ◽  
pp. 094101 ◽  
Author(s):  
Yachao Zhang ◽  
Tao Zhang ◽  
Hong Zhou ◽  
Yao Li ◽  
Shengrui Xu ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Performance

scholarly journals Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

Carbon ◽  
2020 ◽  
Vol 170 ◽  
pp. 182-190
Author(s):  
Yuliya Mindarava ◽  
Rémi Blinder ◽  
Christian Laube ◽  
Wolfgang Knolle ◽  
Bernd Abel ◽  
...  
Keyword(s):  
High Temperature ◽  
Electron Irradiation ◽  
Nitrogen Vacancy ◽  
Efficient Conversion ◽  
Diamond Particles ◽  
Nitrogen Vacancy Centers ◽  
Temperature Electron

High temperature electron transport properties of AlGaN/GaN heterostructures with different Al-contents

2009 ◽  
Vol 52 (12) ◽  
pp. 1879-1884 ◽  
Author(s):  
ZhongFen Zhang ◽  
JinCheng Zhang ◽  
ZhiHao Xu ◽  
HuanTao Duan ◽  
Yue Hao
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Transport Properties ◽  
Electron Transport Properties ◽  
Temperature Electron
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