The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures

2009 ◽  
Vol 95 (20) ◽  
pp. 203504 ◽  
Author(s):  
F. González-Posada Flores ◽  
C. Rivera ◽  
E. Muñoz
Keyword(s):  
Electrical Properties ◽  
Electron Mobility ◽  
Strain State ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1414
Author(s):  
Sung-Jae Chang ◽  
Kyu-Jun Cho ◽  
Sang-Youl Lee ◽  
Hwan-Hee Jeong ◽  
Jae-Hoon Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Sapphire Substrate ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Back Side ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Cu Film ◽  
Lift Off

We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the substrates/films, GaN-based HEMTs were processed using 4-inch sapphire substrates and separated from their original substrates through the laser lift-off technique. The separated AlGaN/GaN films including processed GaN-based HEMTs were bonded to AlN substrate or plated with a 100 µm-thick Cu at the back-side of the devices since AlN substrate and Cu film exhibit higher thermal conductivity than the sapphire substrate. Compared to the sapphire substrate, DC and RF properties such as drain current, transconductance, cut-off frequency and maximum oscillation frequency were improved, when GaN-based HEMTs were operated on AlN substrate or Cu film. Our systematic study has revealed that the device property improvement results from the diminishment of the self-heating effect, increase in carrier mobility under the gated region, and amelioration of sheet resistance at the access region. C(V) and pulse-mode stress measurements have confirmed that the back-side processing for the device transfer from sapphire substrate onto AlN substrate or Cu film did not induce the critical defects close to the AlGaN/GaN hetero-interface.

Incorporation of fluorine into the n-type (AIxGayIn1−x−y)as System

1995 ◽  
Vol 417 ◽  
Author(s):  
N. Hayafuji ◽  
Y. Yamamoto ◽  
N. Fujii ◽  
T. Sonoda ◽  
S. Takamiya
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Thermal Degradation ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
P Systems ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AbstractIn order to elucidate the degradation of the electrical properties of AlInAs/GaInAs high electron mobility transistors during thermal treatment due to the fluorine contamination, the material dependence of this phenomenon has been investigated in AIxGayIn1−x−y As and AlxGayIn1−x−y P systems. The thermal degradation is found to be peculiar to the material containing both of AlAs and InAs, and most serious degradation occurs when the compositional ratio of AlAs to InAs is 1:1. It is also observed that donor-fluorine bonds are formed in the thermally annealed n-type AlInAs layers. The thermal degradation is thought to be due to the fscattering effect of the donorfluorine complex.

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