Breakdown of silicon particle detectors under proton irradiation

2009 ◽  
Vol 106 (10) ◽  
pp. 104914 ◽  
Author(s):  
S. Väyrynen ◽  
J. Räisänen ◽  
I. Kassamakov ◽  
E. Tuominen
Keyword(s):  
Proton Irradiation ◽  
Silicon Particle ◽  
Particle Detectors

Noise behavior of semi-insulating GaAs particle detectors before and after proton irradiation

1999 ◽  
Vol 78 (1-3) ◽  
pp. 527-532 ◽  
Author(s):  
U. Biggeri ◽  
C. Canali ◽  
C. Lanzieri ◽  
C. Leroy ◽  
F. Nava ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Particle Detectors ◽  
Before And After

Qualification of a new supplier for silicon particle detectors

2013 ◽  
Vol 732 ◽  
pp. 74-78 ◽  
Author(s):  
M. Dragicevic ◽  
U. Bartl ◽  
T. Bergauer ◽  
E. Frühwirth ◽  
S. Gamerith ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors

Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors

2005 ◽  
pp. 217-222
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
S.B. Lastovski ◽  
S.B. Lastovskii ◽  
N.M. Kazuchits ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors ◽  
Defect Reactions

Defect characterization in silicon particle detectors irradiated with Li ions

2006 ◽  
Vol 53 (2) ◽  
pp. 589-594 ◽  
Author(s):  
M. Scaringella ◽  
D. Menichelli ◽  
A. Candelori ◽  
R. Rando ◽  
M. Bruzzi
Keyword(s):  
Silicon Particle ◽  
Defect Characterization ◽  
Particle Detectors

Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

2005 ◽  
Vol 483-485 ◽  
pp. 1025-1028 ◽  
Author(s):  
Nikita B. Strokan ◽  
Alexander M. Ivanov ◽  
N.S. Savkina ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Proton Irradiation ◽  
Type Structure ◽  
Particle Detectors ◽  
Nuclear Particle ◽  
P Type ◽  
Nuclear Detectors ◽  
Mev Protons

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 10 13 cm –2 ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 10 14 cm.

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

2002 ◽  
Vol 49 (4) ◽  
pp. 1750-1755 ◽  
Author(s):  
B. MacEvoy ◽  
A. Santocchia ◽  
G. Hall ◽  
F. Moscatelli ◽  
D. Passeri ◽  
...  
Keyword(s):  
Charge Exchange ◽  
Silicon Particle ◽  
Cryogenic Temperatures ◽  
Particle Detectors

scholarly journals Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3388 ◽  
Author(s):  
Ceponis ◽  
Badokas ◽  
Deveikis ◽  
Pavlov ◽  
Rumbauskas ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Short Circuit ◽  
Chemical Vapour ◽  
Short Circuit Current ◽  
Luminescence Spectra ◽  
Particle Detectors ◽  
Chemical Vapour Deposition Technique ◽  
Double Response ◽  
Future Collider ◽  
Radiation Hard

Wide bandgap AlGaN is one of the most promising materials for the fabrication of radiation hard, double-response particle detectors for future collider facilities. However, the formation of defects during growth and fabrication of AlGaN-based devices is unavoidable. Furthermore, radiation defects are formed in detector structures during operation at extreme conditions. In this work, study of evolution of the proton-induced luminescence spectra and short-circuit current has been simultaneously performed during 1.6 MeV proton irradiation. GaN and AlGaN (with various Al concentrations) epi-layers grown by metalorganic chemical vapour deposition technique and Schottky diode structures have been examined. Variations of spectral and electrical parameters could be applied for the remote dosimetry of large hadron fluences.

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