Effect of cubic phase evolution on field emission properties of boron nitride island films

2009 ◽  
Vol 106 (11) ◽  
pp. 113706 ◽  
Author(s):  
Kungen Teii ◽  
Ryota Yamao ◽  
Seiichiro Matsumoto
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Phase Evolution ◽  
Cubic Phase ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Island Films

Growth and Field Emission Properties of Boron Nitride Island Films by Low-energy Ion-assisted Deposition

2011 ◽  
Vol 1307 ◽  
Author(s):  
K. Teii ◽  
J. H. C. Yang ◽  
R. Yamao ◽  
S. Matsumoto
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Low Energy ◽  
Emission Properties ◽  
Inductively Coupled ◽  
Field Emission Properties ◽  
Island Films

ABSTRACTWe report the growth and field emission properties of boron nitride (BN) island films by chemical vapor deposition in inductively coupled plasma. Fine-grained island films with large surface roughness can be grown for initial sp2-bonded BN and subsequent cubic BN (cBN) phases by using low-energy (~20 eV) ion bombardment. Ultraviolet photoelectron spectroscopy indicates that the electron affinity is as low as 0.3 eV for both sp2-bonded BN and cBN phases. The evolution of cBN islands reduces the turn-on field down to around 9 V/μm and increases the current density up to 10-4 A/cm2. The surface potential barrier height is estimated to be about 3.4 eV for emission from the Fermi level.

scholarly journals Wafer-scale on-chip synthesis and field emission properties of vertically aligned boron nitride based nanofiber arrays

2019 ◽  
Vol 114 (9) ◽  
pp. 093101 ◽  
Author(s):  
Hu Long ◽  
Thang Pham ◽  
Aiming Yan ◽  
Zhen Guo ◽  
Hiroya Ishida ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
Wafer Scale ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Vertically Aligned ◽  
On Chip

Field Emission Properties of BN/C and BN@C Hybrid Nanotubes

2002 ◽  
Vol 739 ◽  
Author(s):  
Vincent Meunier ◽  
Marco Buongiorno Nardelli ◽  
William Shelton ◽  
Christopher Roland ◽  
Jerry Bernholc ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Boron Nitride ◽  
Plane Wave ◽  
Electric Field ◽  
Field Emission ◽  
Current Density ◽  
Real Space ◽  
Ab Initio Methods ◽  
Emission Properties ◽  
Field Emission Properties

ABSTRACTOur simulations predict that boron-nitride (BN) doping in carbon nanotubes can greatly improve the field emission properties of these systems. The intrinsic electric field associated with the polarity of the B-N bond enhances the emitted current density through a reduction of the work function at the tip. Using a combination of real-space and plane-wave ab initio methods, we show that this effect is present in both coaxial (BN@C) and linear (BN/C) nanotubular assemblies. While in the coaxial geometry the improvement amounts to a factor of five, the current density is predicted to increase by up to two orders of magnitude in BN/C superlattices.

scholarly journals Electronic and field emission properties of boron nitride/carbon nanotube superlattices

2002 ◽  
Vol 81 (1) ◽  
pp. 46-48 ◽  
Author(s):  
Vincent Meunier ◽  
Christopher Roland ◽  
J. Bernholc ◽  
Marco Buongiorno Nardelli
Keyword(s):  
Carbon Nanotube ◽  
Boron Nitride ◽  
Field Emission ◽  
Emission Properties ◽  
Field Emission Properties

High-Performance Field-Emission Properties of Boron Nitride Nanotube Field Emitters

2017 ◽  
Vol 9 (2) ◽  
pp. 1562-1568 ◽  
Author(s):  
Ki Nam Yun ◽  
Yuning Sun ◽  
Jun Soo Han ◽  
Yoon-Ho Song ◽  
Cheol Jin Lee
Keyword(s):  
Boron Nitride ◽  
Field Emission ◽  
High Performance ◽  
Boron Nitride Nanotube ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Field Emitters
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