Nonalloyed and in situ Ohmic contacts to highly doped n‐type GaAs layers grown by molecular beam epitaxy (MBE) for field‐effect transistors

J. V. DiLorenzo; W. C. Niehaus; A. Y. Cho

doi:10.1063/1.326017

Nonalloyed and in situ Ohmic contacts to highly doped n‐type GaAs layers grown by molecular beam epitaxy (MBE) for field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.326017 ◽

1979 ◽

Vol 50 (2) ◽

pp. 951-954 ◽

Cited By ~ 28

Author(s):

J. V. DiLorenzo ◽

W. C. Niehaus ◽

A. Y. Cho

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Ohmic Contacts ◽

Molecular Beam ◽

Field Effect Transistors

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WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1978.19339 ◽

1978 ◽

Vol 25 (11) ◽

pp. 1356-1356

Author(s):

J.V. DiLorenzo ◽

W.C. Niehaus ◽

A.Y. Cho

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Ohmic Contacts ◽

Molecular Beam ◽

Field Effect Transistors

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Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.2234566 ◽

2006 ◽

Vol 89 (4) ◽

pp. 042101 ◽

Cited By ~ 16

Author(s):

Seung Jae Hong ◽

Kyekyoon (Kevin) Kim

Keyword(s):

Molecular Beam Epitaxy ◽

High Power ◽

Field Effect ◽

Ohmic Contacts ◽

Molecular Beam ◽

Field Effect Transistors ◽

Selective Area Growth ◽

Low Resistance ◽

Selective Area ◽

Area Growth

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Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.100740 ◽

1989 ◽

Vol 54 (12) ◽

pp. 1136-1138 ◽

Cited By ~ 5

Author(s):

J. B. Kuang ◽

P. J. Tasker ◽

Y. K. Chen ◽

G. W. Wang ◽

L. F. Eastman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal‐semiconductor field‐effect transistors on a semi‐insulating GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.94741 ◽

1984 ◽

Vol 44 (3) ◽

pp. 325-327 ◽

Cited By ~ 14

Author(s):

T. Sanada ◽

S. Yamakoshi ◽

O. Wada ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Monolithic Integration ◽

Multiquantum Well

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Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy

Journal of Applied Physics ◽

10.1063/1.343600 ◽

1989 ◽

Vol 66 (12) ◽

pp. 6168-6174 ◽

Cited By ~ 7

Author(s):

J. B. Kuang ◽

P. J. Tasker ◽

S. Ratanaphanyarat ◽

W. J. Schaff ◽

L. F. Eastman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Low Frequency ◽

Microwave Characterization

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Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Applied Physics Express ◽

10.7567/apex.10.071101 ◽

2017 ◽

Vol 10 (7) ◽

pp. 071101 ◽

Cited By ~ 77

Author(s):

Elaheh Ahmadi ◽

Onur S. Koksaldi ◽

Xun Zheng ◽

Tom Mates ◽

Yuichi Oshima ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si

Applied Physics Letters ◽

10.1063/1.95410 ◽

1984 ◽

Vol 45 (8) ◽

pp. 907-909 ◽

Cited By ~ 68

Author(s):

T. P. Smith ◽

Julia M. Phillips ◽

W. M. Augustyniak ◽

P. J. Stiles

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors

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In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxy

Thin Solid Films ◽

10.1016/0040-6090(88)90376-8 ◽

1988 ◽

Vol 166 ◽

pp. 155-162 ◽

Cited By ~ 11

Author(s):

P. Chu ◽

C.L. Lin ◽

H.H. Wieder

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Strained Layer

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Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2117 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2117-2121 ◽

Cited By ~ 7

Author(s):

Takashi Uehara ◽

Hiroshi Matsubara ◽

Ryosho Nakane ◽

Satoshi Sugahara ◽

Shin-ichi Takagi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source

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Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

Journal of Materials Chemistry C ◽

10.1039/c6tc03386e ◽

2016 ◽

Vol 4 (43) ◽

pp. 10386-10394 ◽

Cited By ~ 13

Author(s):

Md. Shafiqur Rahman ◽

Susmita Ghose ◽

Liang Hong ◽

Pradip Dhungana ◽

Abbas Fahami ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Pulsed Laser ◽

Buffer Layers ◽

Laser Deposition ◽

Non Volatile Memory ◽

Multiferroic Films

SrTiO3 films on GaAs, grown by molecular beam epitaxy, serve as buffer layers for epitaxial growth of ferromagnetic or multiferroic films using pulsed laser deposition.

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