Origin(s) of the apparent high permittivity in CaCu3Ti4O12 ceramics: clarification on the contributions from internal barrier layer capacitor and sample-electrode contact effects

2009 ◽  
Vol 106 (10) ◽  
pp. 104106 ◽  
Author(s):  
Ming Li ◽  
Zhijian Shen ◽  
Mats Nygren ◽  
Antonio Feteira ◽  
Derek C. Sinclair ◽  
...  
Keyword(s):  
Barrier Layer ◽  
High Permittivity ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor ◽  
Electrode Contact ◽  
Contact Effects

Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics

2012 ◽  
Vol 32 (12) ◽  
pp. 3313-3323 ◽  
Author(s):  
Rainer Schmidt ◽  
Martin C. Stennett ◽  
Neil C. Hyatt ◽  
Jan Pokorny ◽  
Jesús Prado-Gonjal ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Sintering Temperature ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor

CaCu3Ti4O12: One-step internal barrier layer capacitor

2002 ◽  
Vol 80 (12) ◽  
pp. 2153-2155 ◽  
Author(s):  
Derek C. Sinclair ◽  
Timothy B. Adams ◽  
Finlay D. Morrison ◽  
Anthony R. West
Keyword(s):  
Barrier Layer ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor ◽  
One Step

Giant Dielectric Properties of Ga3+–Nb5+ Co-doped TiO2 Ceramics Driven by the Internal Barrier Layer Capacitor Effect

Materialia ◽  
2021 ◽  
pp. 101175
Author(s):  
Wattana Tuichai ◽  
Supamas Danwittayakul ◽  
Jedsada Manyam ◽  
Narong Chanlek ◽  
Masaki Takesada ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Barrier Layer ◽  
Doped Tio2 ◽  
Internal Barrier ◽  
Giant Dielectric ◽  
Internal Barrier Layer Capacitor ◽  
Co Doped

Valence and electronic trap states of manganese in SrTiO3-based colossal permittivity barrier layer capacitors

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 92127-92133 ◽  
Author(s):  
Kosuke Tsuji ◽  
Wei-Ting Chen ◽  
Hanzheng Guo ◽  
Xiao-Ming Chen ◽  
Tai-Kuang Lee ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Trap Level ◽  
Trap States ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor ◽  
Macroscopic Properties ◽  
Colossal Permittivity

Valence and trap level of manganese in the (Mn, Nb)-doped SrTiO3 internal barrier layer capacitor was revealed by EELS and Q-DLTS, explaining macroscopic properties.

Dielectric properties of high-permittivity A2/3CuTa4O12 ceramics

2014 ◽  
Vol 31 (3) ◽  
pp. 137-142 ◽  
Author(s):  
Dorota Szwagierczak
Keyword(s):  
Dielectric Properties ◽  
Barrier Layer ◽  
Xrd Analysis ◽  
Dielectric Behavior ◽  
Secondary Phases ◽  
High Permittivity ◽  
Content Type ◽  
X Ray ◽  
Temperature Range ◽  
Internal Barrier

Purpose – This paper aims to present the comparative study on the composition, microstructure and dielectric behavior of a group of new nonferroelectric high-permittivity A2/3CuTa4O12 (A = Y, Nd, Sm, Gd, Dy or Bi) ceramics. Design/methodology/approach – The materials under investigation were synthesized by solid-state reaction method and sintered at 1,120-1,230°C. Dielectric properties were investigated in the temperature range from −55 to 740°C at frequencies 10 Hz to 2 MHz. Microstructure, elemental composition and phase composition of the ceramics were examined by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) methods. DC conductivity was studied in the temperature range 20-740°C. Findings – XRD analysis revealed peaks corresponding to Cu2Ta4O12 along with small amounts of secondary phases based on tantalum oxides. Impedance spectroscopic data and the results of SEM and EDS studies imply the spontaneous formation of internal barrier layer capacitors in the investigated materials. Two steps can be distinguished in the dielectric permittivity versus frequency plots. The low-frequency step of 1,000-100,000 is assigned to grain boundary barrier layer effect, while the high-frequency one of 34-46 is related to intrinsic properties of grains. Originality/value – Search for new high-permittivity capacitor materials is important for the progress in miniaturization and integration scale of electronic passive components. The paper reports on processing, microstructure, microanalysis studies and dielectric properties of a group of novel nonferroelectric materials with the perovskite structure of CaCu3Ti4O12 and the general formula A2/3CuTa4O12, being spontaneously formed internal barrier layer capacitors.

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

2008 ◽  
Vol 92 (2) ◽  
pp. 022905 ◽  
Author(s):  
Sudipta Sarkar ◽  
Pradip Kumar Jana ◽  
B. K. Chaudhuri
Keyword(s):  
Barrier Layer ◽  
Polycrystalline Copper ◽  
Internal Barrier ◽  
Capacitance Effect
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