Valence and electronic trap states of manganese in SrTiO3-based colossal permittivity barrier layer capacitors

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 92127-92133 ◽  
Author(s):  
Kosuke Tsuji ◽  
Wei-Ting Chen ◽  
Hanzheng Guo ◽  
Xiao-Ming Chen ◽  
Tai-Kuang Lee ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Trap Level ◽  
Trap States ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor ◽  
Macroscopic Properties ◽  
Colossal Permittivity

Valence and trap level of manganese in the (Mn, Nb)-doped SrTiO3 internal barrier layer capacitor was revealed by EELS and Q-DLTS, explaining macroscopic properties.

Effects of sintering temperature on the internal barrier layer capacitor (IBLC) structure in CaCu3Ti4O12 (CCTO) ceramics

2012 ◽  
Vol 32 (12) ◽  
pp. 3313-3323 ◽  
Author(s):  
Rainer Schmidt ◽  
Martin C. Stennett ◽  
Neil C. Hyatt ◽  
Jan Pokorny ◽  
Jesús Prado-Gonjal ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Sintering Temperature ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor

CaCu3Ti4O12: One-step internal barrier layer capacitor

2002 ◽  
Vol 80 (12) ◽  
pp. 2153-2155 ◽  
Author(s):  
Derek C. Sinclair ◽  
Timothy B. Adams ◽  
Finlay D. Morrison ◽  
Anthony R. West
Keyword(s):  
Barrier Layer ◽  
Internal Barrier ◽  
Internal Barrier Layer Capacitor ◽  
One Step

Giant Dielectric Properties of Ga3+–Nb5+ Co-doped TiO2 Ceramics Driven by the Internal Barrier Layer Capacitor Effect

Materialia ◽  
2021 ◽  
pp. 101175
Author(s):  
Wattana Tuichai ◽  
Supamas Danwittayakul ◽  
Jedsada Manyam ◽  
Narong Chanlek ◽  
Masaki Takesada ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Barrier Layer ◽  
Doped Tio2 ◽  
Internal Barrier ◽  
Giant Dielectric ◽  
Internal Barrier Layer Capacitor ◽  
Co Doped

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

2008 ◽  
Vol 92 (2) ◽  
pp. 022905 ◽  
Author(s):  
Sudipta Sarkar ◽  
Pradip Kumar Jana ◽  
B. K. Chaudhuri
Keyword(s):  
Barrier Layer ◽  
Polycrystalline Copper ◽  
Internal Barrier ◽  
Capacitance Effect

Colossal Permittivity Observed in Yttrium Doped BaTiO3

2015 ◽  
Vol 1096 ◽  
pp. 360-365
Author(s):  
Zhen Jiang Shen ◽  
Li Na Bing
Keyword(s):  
Sample Preparation ◽  
Grain Growth ◽  
Barrier Layer ◽  
Perovskite Structure ◽  
Grain Sizes ◽  
Polycrystalline Ceramics ◽  
Synthesis Procedure ◽  
Colossal Permittivity ◽  
Doping Condition ◽  
Designed Synthesis

Colossal permittivity (CP) in BaTiO3(BT)-based polycrystalline ceramics with normal grain sizes has been successfully obtained in yttrium (Y) doped BT ceramics (BYT) via a simple and effective method. Considering the necessary factors for CP formation mechanism, well designed doping condition and sintering procedure were carried out in the sample preparation. Characterizations show that BYT is with a pure tetragonal perovskite structure and the grain growth is depressed under the action of Y donor doping. The frequency independence of permittivity and Debye-like relaxation related to Maxwell-Wagner relaxation which occurred at the interfaces between semiconducting grains and insulating grain boundaries can be detected. These are induced by an internal barrier layer capacitance (IBLC)-type structure which formed under an overall and carefully designed synthesis procedure. But the temperature independence of permittivity does not arise because of the particular tetragonal structure and micron dimension grain sizes of BYT.

scholarly journals Comparison of colossal permittivity of CaCu3Ti4O12 with commercial grain boundary barrier layer capacitor

2019 ◽  
Vol 96 ◽  
pp. 105943
Author(s):  
Sonia De Almeida-Didry ◽  
Cécile Autret ◽  
Anthony Lucas ◽  
François Pacreau ◽  
François Gervais
Keyword(s):  
Grain Boundary ◽  
Barrier Layer ◽  
Colossal Permittivity ◽  
Grain Boundary Barrier
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