Initial growth process of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition

2009 ◽  
Vol 106 (9) ◽  
pp. 094302 ◽  
Author(s):  
Shingo Kondo ◽  
Shinji Kawai ◽  
Wakana Takeuchi ◽  
Koji Yamakawa ◽  
Shoji Den ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Carbon Nanowalls

Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition

2006 ◽  
Vol 45 (1A) ◽  
pp. 49-53 ◽  
Author(s):  
Yasuyuki Okuda ◽  
Shinya Naito ◽  
Osamu Nakatsuka ◽  
Hiroki Kondo ◽  
Tomoyuki Okuhara ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Process ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Tin Films ◽  
Thermal Chemical Vapor Deposition

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

scholarly journals Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition

2019 ◽  
Vol 5 (1) ◽  
pp. 7
Author(s):  
Masakazu Tomatsu ◽  
Mineo Hiramatsu ◽  
Hiroki Kondo ◽  
Kenji Ishikawa ◽  
Takayoshi Tsutsumi ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Degradation Mechanism ◽  
Chemical Vapor ◽  
Oh Radicals ◽  
Platinum Nanoparticle ◽  
H2o2 Reduction ◽  
Carbon Nanowalls ◽  
Cv Measurements

Hydrogen peroxide (H2O2) reactions on platinum nanoparticle-decorated carbon nanowalls (Pt-CNWs) under potential applications were investigated on a platform of CNWs grown on carbon fiber paper (CFP) using plasma-enhanced chemical vapor deposition. Through repeated cyclic voltammetry (CV), measurements of 1000 cycles using the Pt-CNW electrodes in phosphate-buffered saline (PBS) solution with 240 μM of H2O2, the observed response peak currents of H2O2 reduction decreased with the number of cycles, which is attributed to decomposition of H2O2. After CV measurements for a total of 3000 cycles, the density and height of CNWs were reduced and their surface morphology changed. Energy-dispersive X-ray (EDX) compositional mapping revealed agglomeration of Pt nanoparticles around the top edges of CNWs. The degradation mechanism of Pt-CNWs under potential application with H2O2 is discussed by focusing on the behavior of OH radicals generated by the H2O2 reduction.

Synthesis of Vertically Aligned Carbon Nanofibers-Carbon Nanowalls by Plasma-Enhanced Chemical Vapor Deposition

2013 ◽  
Vol 13 (3) ◽  
pp. 1956-1960
Author(s):  
Atsuto Okamoto ◽  
Kei Tanaka ◽  
Masamichi Yoshimura ◽  
Kazuyuki Ueda ◽  
Pradip Ghosh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanofibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vertically Aligned ◽  
Carbon Nanowalls ◽  
Vertically Aligned Carbon Nanofibers
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