Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
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2001 ◽
Vol 40
(Part 2, No. 12A)
◽
pp. L1293-L1296
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2000 ◽
Vol 12
(2)
◽
pp. 137-139
◽
1998 ◽
Vol 37
(Part 1, No. 6A)
◽
pp. 3309-3312
◽
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