Optical properties of AlGaN∕GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate

2006 ◽  
Vol 99 (2) ◽  
pp. 023513 ◽  
Author(s):  
J. Bai ◽  
T. Wang ◽  
P. Comming ◽  
P. J. Parbrook ◽  
J. P. R. David ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Quantum Well ◽  
Sapphire Substrate ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Aln Buffer

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

2009 ◽  
Vol 95 (16) ◽  
pp. 161904 ◽  
Author(s):  
Q. Wang ◽  
Y. P. Gong ◽  
J. F. Zhang ◽  
J. Bai ◽  
F. Ranalli ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Aln Buffer

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation
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