Effects of gas flow rate on the length of atmospheric pressure nonequilibrium plasma jets

2009 ◽  
Vol 95 (14) ◽  
pp. 141502 ◽  
Author(s):  
Qing Li ◽  
Jiang-Tao Li ◽  
Wen-Chao Zhu ◽  
Xi-Ming Zhu ◽  
Yi-Kang Pu
2015 ◽  
Vol 3 (15) ◽  
pp. 3530-3535 ◽  
Author(s):  
Jing Li ◽  
Xuan-Yun Wang ◽  
Xing-Rui Liu ◽  
Zhi Jin ◽  
Dong Wang ◽  
...  

By mildly oxidizing Cu foil and slowing down the gas flow rate, centimeter-sized single-crystalline graphene was grown on Cu at atmospheric pressure.


2021 ◽  
Vol 19 (48) ◽  
pp. 44-51
Author(s):  
Saba Jawad Kadhem

     In this manuscript has investigated the synthesis of plasma-polymerized pyrrole (C4H5N) nano-particles prepared by the proposed atmospheric pressure nonequilibrium plasma jet through the parametric studies, particularly gas flow rate (0.5, 1 and 1.5 L/min). The plasma jet which used operates with alternating voltage 7.5kv and frequency 28kHz. The plasma-flow characteristics were investigated based on optical emission spectroscopy (OES). UV-Vis spectroscopy was used to characterize the  oxidization  state for polypyrrole. The major absorption appears around 464.1, 449.7 and 435.3  nm at the three flow rate of argon gas. The chemical composition and structural properties of the contained samples which synthesized at 0.5 L/min as a argon flow rate were analyzed by scanning electron microscopy (SEM), Fourier transformation infrared spectroscopy (FTIR), Raman spectroscopy and X-ray diffraction (XRD). SEM point to a uniform distribution of polypyrrole (PPY) nanoparticles matrix. XRD technique showed a semicrystalline pattern for PPY)thin film. It is expected, that the high-quality plasma polymer grown by atmospheric pressure plasma jet method contributes to serving as conducting materials.


1997 ◽  
Vol 470 ◽  
Author(s):  
G. C. Xing ◽  
D. Lopes ◽  
G. E. Miner

ABSTRACTIn this paper, we report the study of rapid thermal oxidation of silicon in N2O ambient using the Applied Materials RTP Centura rapid thermal processor, and N2O oxide thickness and compositional uniformities with respect to gas flow rate and wafer rotation speed as well as other process parameters. It was found that N2O oxide uniformity is strongly dependent on gas flow rate and wafer rotation speed in addition to process pressure. With optimized setting of the process parameters, excellent oxidation uniformities (one sigma < 1%) were obtained at atmospheric pressure N2O ambient. Nitrogen concentrations of such uniform oxides grown at 1050°C atmospheric pressure N2O oxidation processes were 1.7% for a 40Å oxide and 2.5% for a 60Å oxide, respectively, as characterized by SIMS analysis.


2018 ◽  
Vol 25 (9) ◽  
pp. 093508 ◽  
Author(s):  
Jinsong Kang ◽  
Muyang Qian ◽  
Gui Li ◽  
Sanqiu Liu ◽  
Chunsheng Ren ◽  
...  

2011 ◽  
Vol 383-390 ◽  
pp. 5907-5911 ◽  
Author(s):  
Xue Chen Li ◽  
Ning Yuan ◽  
Peng Ying Jia

Appling a high voltage to the dielectric barrier discharge device in a coaxial geometry in flowing argon, a uniform plasma plume is generated at one atmospheric pressure. The waveforms of discharge current and the applied voltage are investigated and results indicate that both the intensity and duration width of the discharge current pulse increase with increasing the applied voltage. The gas temperature of the plasma plume is investigated by using an infrared thermometer. The gas temperature of the plasma plume are functions of gas flow rate, peak value and the frequency of the applied voltage. Results show that the gas temperature increases with increasing the applied voltage or its frequency, while it decreases with increasing the gas flow rate. A qualitative explanation is given for the variance of gas temperature as functions of the experimental parameters by analyzing the waveforms of the discharge current and the applied voltage.


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