Structural and transport properties of CdS films grown on Si substrates

1977 ◽  
Vol 48 (9) ◽  
pp. 3807-3812 ◽  
Author(s):  
F. M. Livingstone ◽  
W. Duncan ◽  
T. Baird
Keyword(s):  
Transport Properties ◽  
Si Substrates ◽  
Cds Films

Formation of Fe 2 SiO 4 thin films on Si substrates and influence of substrate to its thermoelectric transport properties

2018 ◽  
Vol 532 ◽  
pp. 80-83 ◽  
Author(s):  
Jeongyong Choi ◽  
Van Quang Nguyen ◽  
Van Thiet Duong ◽  
Yooleemi Shin ◽  
Anh Tuan Duong ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Thermoelectric Transport ◽  
Si Substrates ◽  
Thermoelectric Transport Properties ◽  
Influence Of Substrate

Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates

2018 ◽  
Vol 29 (31) ◽  
pp. 315706 ◽  
Author(s):  
Mingze Li ◽  
Zhenhua Wang ◽  
Liang Yang ◽  
Desheng Pan ◽  
Da Li ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Transport ◽  
Si Substrates

scholarly journals Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

2020 ◽  
Vol 10 (12) ◽  
pp. 4350 ◽  
Author(s):  
Aiswarya Pradeepkumar ◽  
D. Kurt Gaskill ◽  
Francesca Iacopi
Keyword(s):  
Transport Properties ◽  
Active Material ◽  
Epitaxial Graphene ◽  
Fine Tuning ◽  
Integrated Electronics ◽  
Si Substrates

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.

Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition

2002 ◽  
Vol 80 (22) ◽  
pp. 4202-4204 ◽  
Author(s):  
S. J. Liu ◽  
J. Y. Juang ◽  
K. H. Wu ◽  
T. M. Uen ◽  
Y. S. Gou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates

First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements

2019 ◽  
Vol 21 (11) ◽  
pp. 6011-6020 ◽  
Author(s):  
Zhehao Sun ◽  
Kunpeng Yuan ◽  
Xiaoliang Zhang ◽  
Dawei Tang
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Thermal Transport ◽  
First Principles Calculations ◽  
Group V ◽  
Si Substrates ◽  
Thermal Transport Properties

This study explores the phonon-level mechanisms for interfacial thermal transport, especially systematically analyzing the effect of crystal information at interfaces.

Transport properties in a-CdS films

1985 ◽  
Vol 77-78 ◽  
pp. 1317-1320 ◽  
Author(s):  
E Vateva ◽  
D Nesheva
Keyword(s):  
Transport Properties ◽  
Cds Films
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