Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition

2002 ◽  
Vol 80 (22) ◽  
pp. 4202-4204 ◽  
Author(s):  
S. J. Liu ◽  
J. Y. Juang ◽  
K. H. Wu ◽  
T. M. Uen ◽  
Y. S. Gou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Transport Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates

Synthesis of diamond-like carbon films on Si substrates by photoemission-assisted plasma-enhanced chemical vapor deposition

2012 ◽  
Vol 523 ◽  
pp. 25-28 ◽  
Author(s):  
Meng Yang ◽  
Shuichi Ogawa ◽  
Susumu Takabayashi ◽  
Taiichi Otsuji ◽  
Yuji Takakuwa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Si Substrates

scholarly journals In-plane growth of large ultra-thin SnS2 nanosheets by tellurium-assisted chemical vapor deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (46) ◽  
pp. 29080-29087 ◽  
Author(s):  
Zhigang Wang ◽  
Fei Pang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates

We successfully synthesized in-plane SnS2 NSs with sizes up to 280 μm on SiO2/Si substrates via Te-assisted CVD.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates

1989 ◽  
Vol 55 (15) ◽  
pp. 1522-1524 ◽  
Author(s):  
Mitsuhiro Shigeta ◽  
Yoshihisa Fujii ◽  
Katsuki Furukawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrates ◽  
Single Crystal Films ◽  
Crystal Films
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