Reply to ’’Comment on ’Comparison of experimental and theoretical carrier concentrations in heavily doped n‐type silicon’ ’’

1977 ◽  
Vol 48 (8) ◽  
pp. 3620-3620
Author(s):  
M. Finetti ◽  
E. Susi
Keyword(s):  
Type Silicon ◽  
Heavily Doped

Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 3937-3941 ◽  
Author(s):  
Naoki Fukata ◽  
Shinichi Sasaki ◽  
Shuzo Fujimura ◽  
Hajime Haneda ◽  
Kouichi Murakami
Keyword(s):  
Hydrogen Passivation ◽  
Type Silicon ◽  
Heavily Doped

Orbach relaxation process in heavily doped n-type silicon

1979 ◽  
Vol 56 (2) ◽  
pp. K109-K112
Author(s):  
Y. Ochiai ◽  
E. Matsuura
Keyword(s):  
Relaxation Process ◽  
Type Silicon ◽  
Heavily Doped

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

Transport properties of heavily doped N-type silicon

1966 ◽  
Vol 4 (3) ◽  
pp. 111-114 ◽  
Author(s):  
M. Balkanski ◽  
A. Geismar
Keyword(s):  
Transport Properties ◽  
Type Silicon ◽  
Heavily Doped

Spin relaxation through lateral spin transport in heavily doped n -type silicon

2017 ◽  
Vol 95 (11) ◽  
Author(s):  
M. Ishikawa ◽  
T. Oka ◽  
Y. Fujita ◽  
H. Sugiyama ◽  
Y. Saito ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Spin Transport ◽  
Type Silicon ◽  
Heavily Doped

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped n-type Silicon Wafers

2019 ◽  
Vol 44 (1) ◽  
pp. 751-757 ◽  
Author(s):  
Tao Xu ◽  
Xinpeng Zhang ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Flow Pattern ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Heavily Doped
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