High‐field drift velocity of silicon inversion layers—a Monte Carlo calculation

1977 ◽  
Vol 48 (1) ◽  
pp. 350-353 ◽  
Author(s):  
P. K. Basu
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Monte Carlo Calculation ◽  
Field Drift

High-field drift velocity of electrons in p-type silicon

1970 ◽  
Vol 13 (7) ◽  
pp. 1115-1117 ◽  
Author(s):  
J.L. Su ◽  
Y. Nishi ◽  
J.L. Moll ◽  
A. Neukermans
Keyword(s):  
Drift Velocity ◽  
High Field ◽  
Type Silicon ◽  
P Type ◽  
Field Drift

scholarly journals High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
F. M. Bufler ◽  
P. Graf ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Hole Transport ◽  
Band Model ◽  
Strained Si ◽  
Saturation Velocity ◽  
Full Band ◽  
Structure Description ◽  
Strained Sige

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

Fluctuations in Drift Velocity of High-Field Domains in n-GaAs

1972 ◽  
Vol 50 (6) ◽  
pp. 617-618
Author(s):  
L. G. Hart
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Frequency Modulation ◽  
High Field ◽  
Gunn Diode ◽  
Accumulation Layer ◽  
Transport Studies ◽  
Free Running

A source of frequency-modulation (FM) noise in a free-running Gunn diode, due to fluctuations in valley population in the accumulation layer, is investigated using the results of recent Monte-Carlo high-field transport studies.

The high-field drift velocity in degenerately-doped silicon nanowires

2008 ◽  
Author(s):  
Hui Houg Lau ◽  
Ing Hui Hii ◽  
Aaron Chii Enn Lee ◽  
M.Taghi Ahmadi ◽  
Razali Ismail ◽  
...  
Keyword(s):  
Drift Velocity ◽  
Silicon Nanowires ◽  
High Field ◽  
Doped Silicon ◽  
Field Drift

High‐field drift velocity of holes in inversion layers on silicon

1982 ◽  
Vol 41 (9) ◽  
pp. 857-859 ◽  
Author(s):  
D. F. Nelson ◽  
J. A. Cooper ◽  
A. R. Tretola
Keyword(s):  
Drift Velocity ◽  
High Field ◽  
Field Drift
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