Monte Carlo calculation of the electron drift velocity in GaAs with a superlattice

1973 ◽  
Vol 44 (8) ◽  
pp. 3721-3725 ◽  
Author(s):  
D. Lange Andersen ◽  
Einar J. Aas
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Monte Carlo Calculation ◽  
Electron Drift Velocity ◽  
Electron Drift

Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

2010 ◽  
Vol 39 (6) ◽  
pp. 411-417 ◽  
Author(s):  
A. V. Borzdov ◽  
D. V. Pozdnyakov ◽  
V. M. Borzdov ◽  
A. A. Orlikovsky ◽  
V. V. V’yurkov
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electric Field ◽  
Drift Velocity ◽  
Quantum Wire ◽  
Applied Electric Field ◽  
Electron Drift Velocity ◽  
Electron Drift

Monte Carlo simulation of the electron drift velocity in a one-dimensional GaAs quantum wire

1997 ◽  
Vol 23 (2) ◽  
pp. 98-99 ◽  
Author(s):  
V. M. Borzdov ◽  
O. G. Zhevnyak ◽  
S. G. Mulyarchik ◽  
A. V. Khomich
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Drift Velocity ◽  
Quantum Wire ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
One Dimensional

MONTE CARLO MODELING OF HOT ELECTRON TRANSPORT IN BULK AlAs, AlGaAs AND GaAs AT ROOM TEMPERATURE

2008 ◽  
Vol 22 (18) ◽  
pp. 1777-1784 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. R. KHALVATI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Critical Field ◽  
Electron Drift Velocity ◽  
Electron Velocity ◽  
Electron Drift ◽  
Hot Electron ◽  
Velocity Overshoot ◽  
Transient Velocity ◽  
Hot Electron Transport

The results of an ensemble Monte Carlo simulation of electron drift velocity response on the application field in bulk AlAs , AlGaAs and GaAs are presented. All dominant scattering mechanisms in the structure considered have been taken into account. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of ~105 ms-1 within 4 ps, for all crystal structures. The steady state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

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