Deep‐level energy spectroscopy inp‐type CdTe using TSC measurements

1976 ◽  
Vol 47 (1) ◽  
pp. 264-266 ◽  
Author(s):  
G. M. Martin ◽  
E. Fogarassy ◽  
E. Fabre
Keyword(s):  
Deep Level ◽  
Level Energy

Determination of deep‐level energy and density profiles in inhomogeneous semiconductors

1973 ◽  
Vol 23 (3) ◽  
pp. 150-151 ◽  
Author(s):  
G. Goto ◽  
S. Yanagisawa ◽  
O. Wada ◽  
H. Takanashi
Keyword(s):  
Deep Level ◽  
Level Energy ◽  
Density Profiles

Deep Level Energy Analysis of Surface and Bulk Defects Using a Noncontact Laser/Microwave Photoconductance Technique

1992 ◽  
Vol 261 ◽  
Author(s):  
A. Buczkowski ◽  
G. A. Rozgonyi ◽  
F. Shimura
Keyword(s):  
Energy Analysis ◽  
Deep Level ◽  
Energy Levels ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Level Energy ◽  
Recombination Lifetime ◽  
Recombination Processes ◽  
Bulk Energy ◽  
Recombination Velocity

ABSTRACTA noncontact technique for deep level energy analysis has been discussed based on a laser excitation/microwave reflection transient photoconductance procedure. An algorithm for separation of surface and bulk recombination effects was developed to independently determinesurface and bulk energy states. Deep energy levels associated with trapping and recombination processes have been calculated from the temperature dependence of surface recombination velocity and bulk recombination lifetime, based on state occupation statistics. Results have been compared with conventional DLTS data for silicon samples intentionally doped with metals during crystal growth.

Delta Doping for Deep Level Analysis in Semiconductors

1992 ◽  
Vol 281 ◽  
Author(s):  
J. Piprek ◽  
P. Krispin ◽  
H. Kostial ◽  
K. W. BÖer
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Device Simulation ◽  
Simulation Software ◽  
Level Energy ◽  
New Approach ◽  
Delta Doping ◽  
Capacitance Voltage ◽  
Defects In Semiconductors ◽  
Level Analysis

ABSTRACTThe occupation of deep-level defects in semiconductors is investigated by delta-doping such impurities at a specified distance from the metallurgical boundary within Schottky diodes. Capacitance-voltage characteristics are analyzed using ID device simulation software. These characteristics change significantly depending on the deep-level energy and the sheet position. This new approach to deep-level analysis is applied to Schottky diodes on MBE-grown n-GaAs with a planar titanium doped sheet. At moderate Ti concentrations the well-known Ti acceptor level near Ec-0.2 eV governs the electrical properties. In addition, two other types of Ti defects are found.

EBIC Spectroscopy - A New Approach to Microscale Characterization of Deep Levels in Semi-Insulating GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
C.-J. Li ◽  
Q. Sun ◽  
J. Lagowski ◽  
H.C. Gatos
Keyword(s):  
Electron Beam ◽  
Deep Level ◽  
Relative Concentration ◽  
Monochromatic Light ◽  
Peak Position ◽  
Deep Levels ◽  
Level Energy ◽  
New Approach ◽  
Electron Beam Induced Current

AbstractWe propose a new approach to the defect characterization in semiinsulating (SI) GaAs which combines the high spatial resolution and scanning capability of the Electron Beam-Induced Current (EBIC) mode of Scanning Electron Microscopy (SEM) with the advantages of optical and thermal spectroscopies employed in the identification of deep levels. In the PHOTO-EBIC approach a DC electron beam and a chopped subbandgap monochromatic light impinge on the SI GaAs through a semi-transparent Au electrode. The photoinduced modulation of the EBIC as a function of the subbandgap energy of incident photons constitutes a structure which corresponds to the photoionization of deep levels. In the thermally stimulated EBIC (TS-EBIC) the deep levels are filled at low temperature by the excess carriers generated by an electron beam. Subsequently, the changes of EBIC as a function of temperature constitute a spectrum of peaks which correspond to different deep levels. The peak position determines the deep level energy while the magnitude of peaks can be used for the assessment of the relative concentration of deep levels located within the small volume probed by the electron beam.

Insulator-Metal Transition in Diluted Magnetic Semiconductor Pb1-x-ySnxVyTe under Pressure

2012 ◽  
Vol 190 ◽  
pp. 566-569
Author(s):  
E.P. Skipetrov ◽  
A.N. Golovanov ◽  
B.B. Kovalev ◽  
L.A. Skipetrova ◽  
A.M. Mousalitin ◽  
...  
Keyword(s):  
Deep Level ◽  
Diluted Magnetic Semiconductor ◽  
Pressure Coefficient ◽  
Magnetic Semiconductor ◽  
Metallic Phase ◽  
Level Energy ◽  
Conductivity Type ◽  
Weak Magnetic Fields ◽  
Insulator Metal Transition ◽  
Diluted Magnetic

The galvanomagnetic properties in weak magnetic fields (4.2T300 K, B0.07 T) as well as Shubnikov-de Haas effect (T=4.2 K, B7 T) in the single crystal Pb1-x-ySnxVyTe (x=0.20, y0.01) under hydrostatic compression up to 15 kbar have been investigated. It is shown that under pressure the decrease of activation energy of vanadium deep level, n-p-inversion of the conductivity type at low temperatures and insulator-metal transition take place. In the metallic phase sharp increase of the Hall mobility and appearance of Shubnikov-de Haas oscillations at helium temperature are observed. The pressure coefficient of vanadium level energy is determined and the diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe under pressure is proposed.

Deep-Level Energy States in Nanostructural Porous Silicon

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 539-541 ◽  
Author(s):  
Takahiro Matsumoto ◽  
Hidenori Mimura ◽  
Nobuyoshi Koshida ◽  
Yasuaki Masumoto
Keyword(s):  
Porous Silicon ◽  
Deep Level ◽  
Level Energy ◽  
Energy States

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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