Depth-profiling of elastic inhomogeneities in transparent nanoporous low-k materials by picosecond ultrasonic interferometry

C. Mechri; P. Ruello; J. M. Breteau; M. R. Baklanov; P. Verdonck; V. Gusev

doi:10.1063/1.3220063

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

MRS Proceedings ◽

10.1557/proc-863-b6.8 ◽

2005 ◽

Vol 863 ◽

Cited By ~ 1

Author(s):

P. Ryan Fitzpatrick ◽

Sri Satyanarayana ◽

Yangming Sun ◽

John M. White ◽

John G. Ekerdt

Keyword(s):

Photoelectron Spectroscopy ◽

Depth Profiling ◽

Chemical Vapor ◽

K Value ◽

X Ray ◽

Dimethylamine Borane ◽

The Stability ◽

Low K ◽

Secondary Ion ◽

Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

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Depth-profiling of elastic and optical inhomogeneities in transparent materials by picosecond ultrasonic interferometry: Theory

Journal of Applied Physics ◽

10.1063/1.3665646 ◽

2011 ◽

Vol 110 (12) ◽

pp. 124908 ◽

Cited By ~ 15

Author(s):

V. Gusev ◽

A. M. Lomonosov ◽

P. Ruello ◽

A. Ayouch ◽

G. Vaudel

Keyword(s):

Depth Profiling ◽

Ultrasonic Interferometry ◽

Transparent Materials

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Comparative Analysis of the Nucleation and Growth of Copper on Different Low-k Polymers

MRS Proceedings ◽

10.1557/proc-714-l8.1.1 ◽

2001 ◽

Vol 714 ◽

Author(s):

V. Zaporojtchenko ◽

J. Erichsen ◽

T. Strunskus ◽

K. Behnke ◽

F. Faupel ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Ion Beam ◽

Depth Profiling ◽

Nucleation And Growth ◽

Force Microscopy ◽

Teflon Af ◽

Atomic Force ◽

Transmission Electron ◽

Beam Depth ◽

Low K

ABSTRACTIn this work we present investigations of the nucleation and growth of evaporated copper on several low-k polymers. The evolving interfaces were characterized using transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results were compared between the PMDA/ODA polyimide, Teflon AF 1601 and Silk®. A diffusion coefficient for copper atoms in Silk® determined by low energy ion-beam depth profiling in conjunction with XPS is reported.

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Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

MRS Proceedings ◽

10.1557/proc-0990-b03-12 ◽

2007 ◽

Vol 990 ◽

Cited By ~ 5

Author(s):

Hualiang Shi ◽

Junjing Bao ◽

Junjun liu ◽

Huai Huang ◽

Paul S. Ho ◽

...

Keyword(s):

Plasma Treatment ◽

Leakage Current ◽

Photoelectron Spectroscopy ◽

Depth Profiling ◽

Surface Region ◽

Surface Hydrophobicity ◽

Moisture Uptake ◽

Recovery Effect ◽

X Ray ◽

Low K

ABSTRACTDuring an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.

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Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy

Applied Physics Letters ◽

10.1063/1.1501767 ◽

2002 ◽

Vol 81 (8) ◽

pp. 1447-1449 ◽

Cited By ~ 37

Author(s):

Jia-Ning Sun ◽

David W. Gidley ◽

Yifan Hu ◽

William E. Frieze ◽

E. Todd Ryan

Keyword(s):

Thin Films ◽

Depth Profiling ◽

Positronium Annihilation ◽

Positronium Annihilation Lifetime Spectroscopy ◽

Low K

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Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100096813 ◽

1981 ◽

Vol 39 ◽

pp. 16-17

Author(s):

M.P. Thomas ◽

A.R. Waugh ◽

M.J. Southon ◽

Brian Ralph

Keyword(s):

Single Crystals ◽

Photoelectron Spectroscopy ◽

Surface Composition ◽

Depth Profiling ◽

Analytical Techniques ◽

Atom Probe ◽

Probe Field ◽

Preferential Sputtering ◽

Argon Ion Bombardment ◽

Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

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Electron Probe Analysis of Vertebrate Smooth Muscle: Distribution of Ca and Ci

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100091652 ◽

1976 ◽

Vol 34 ◽

pp. 334-335 ◽

Cited By ~ 1

Author(s):

Avril V. Somlyo ◽

H. Shuman ◽

A.P. Somlyo

Keyword(s):

Smooth Muscle ◽

Electron Probe ◽

Preliminary Report ◽

Cell Damage ◽

Electron Probe Analysis ◽

Perinuclear Space ◽

Probe Analysis ◽

High K ◽

Low K ◽

Initial Results

This is a preliminary report of electron probe analysis of rabbit portal-anterior mesenteric vein (PAMV) smooth muscle cryosectioned without fixation or cryoprotection. The instrumentation and method of electron probe quantitation used (1) and our initial results with cardiac (2) and skeletal (3) muscle have been presented elsewhere.In preparations depolarized with high K (K2SO4) solution, significant calcium peaks were detected over the sarcoplasmic reticulum (Fig 1 and 2) and the continuous perinuclear space. In some of the fibers there were also significant (up to 200 mM/kg dry wt) calcium peaks over the mitochondria. However, in smooth muscle that was not depolarized, high mitochondrial Ca was found in fibers that also contained elevated Na and low K (Fig 3). Therefore, the possibility that these Ca-loaded mitochondria are indicative of cell damage remains to be ruled out.

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Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130298 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1132-1133

Author(s):

Mark Denker ◽

Jennifer Wall ◽

Mark Ray ◽

Richard Linton

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Incidence Angle ◽

Ion Beam ◽

Depth Profiling ◽

Depth Resolution ◽

Ion Beams ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Trace Impurities ◽

Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

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