scholarly journals Depth-profiling plasma-induced densification of porous low-k thin films using positronium annihilation lifetime spectroscopy

2002 ◽  
Vol 81 (8) ◽  
pp. 1447-1449 ◽  
Author(s):  
Jia-Ning Sun ◽  
David W. Gidley ◽  
Yifan Hu ◽  
William E. Frieze ◽  
E. Todd Ryan
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Jingyu Hyeon-Lee ◽  
Jihoon Rhee ◽  
Jungbae Kim ◽  
Jin-Heong Yim ◽  
Seok Chang
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Dielectric Constants ◽  
Commercial Application ◽  
Porous Films ◽  
Low Dielectric ◽  
Nanoporous Films ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

AbstractLow dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.

scholarly journals Revealing hidden pore structure in nanoporous thin films using positronium annihilation lifetime spectroscopy

2005 ◽  
Vol 86 (12) ◽  
pp. 121904 ◽  
Author(s):  
Hua-Gen Peng ◽  
William E. Frieze ◽  
Richard S. Vallery ◽  
David W. Gidley ◽  
Darren L. Moore ◽  
...  
Keyword(s):  
Thin Films ◽  
Pore Structure ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy

Characterizing Porosity in Nanoporous Thin Films Using Positronium Annihilation Lifetime Spectroscopy

2002 ◽  
Vol 726 ◽  
Author(s):  
J.N. Sun ◽  
D. W. Gidley ◽  
Y.F. Hu ◽  
W.E. Frieze ◽  
S. Yang
Keyword(s):  
Pore Size ◽  
Size Distribution ◽  
Depth Profiling ◽  
Positron Beam ◽  
Bound State ◽  
Hybrid Films ◽  
Porous Films ◽  
Pore Characteristics ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy

AbstractDepth profiled positronium annihilation lifetime spectroscopy (PALS) has been used to probe the pore characteristics (size, distribution, and interconnectivity) in thin, porous films, including silica, organic and hybrid films. PALS has good sensitivity to and resolution of all pores (both interconnected and closed) in the size range from 0.3 nm to 30 nm, even in films buried under a diffusion barrier. In this technique a focussed beam of several keV positrons forms positronium (Ps, the electron-positron bound state) with a depth distribution that depends on the selected positron beam energy. Ps inherently localizes in the pores where its natural (vacuum) annihilation lifetime of 142 ns is reduced by collisions with the pore surfaces. The collisionally reduced Ps lifetime is correlated with pore size and is the key feature in transforming a Ps lifetime distribution into a pore size distribution. In hybrid films made porous by a degradable porogen PALS readily detects a percolation threshold with increasing porosity that represents the transition from closed pores to interconnected pores. PALS is a non-destructive, depth profiling technique with the only requirement that positrons can be implanted into the porous film where Ps can form.

Positronium Annihilation Lifetime Spectroscopy of Porous Low-k Films with Periodic Pore Structures

2004 ◽  
Vol 445-446 ◽  
pp. 334-336 ◽  
Author(s):  
Toshiyuki Ohdaira ◽  
Ryoichi Suzuki ◽  
Hironobu Shirataki ◽  
Shin-Ya Matsuno
Keyword(s):  
Pore Structures ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

Depth-profiling Pore Morphology in Nanoporous Thin Films Using Positronium Lifetime Annihilation Spectroscopy

2005 ◽  
Vol 863 ◽  
Author(s):  
Richard S. Vallery ◽  
Hua-Gen Peng ◽  
William E. Frieze ◽  
David W. Gidley ◽  
Darren L. Moore ◽  
...  
Keyword(s):  
Beam Energy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
Positron Beam ◽  
Positronium Lifetime ◽  
Implantation Depth ◽  
Chemical Vapor Deposited ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy

AbstractPositronium annihilation lifetime spectroscopy (PALS) using a positron beam is a proven technique to characterize porosity in amorphous thin film materials. The capability to control the depth of the implanted positrons is unique to beams as compared to traditional bulk PALS techniques. By increasing the positron beam energy, positrons are implanted deeper into the film. Control of the positron implantation depth in beam-PALS allows analysis of sub- micron films, investigation of depth-dependent film inhomogeneities, determination of pore interconnection lengths, and access to buried films under barrier layers. Details on PALS depth profiling and an example of applying the technique to a plasma-enhanced-chemical-vapor- deposited (PECVD) porous film are presented.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

scholarly journals Effect of the molecular weight on the depth profiling of PMMA thin films using low‐energy Cs + sputtering

2021 ◽  
Author(s):  
Amal Ben Hadj Mabrouk ◽  
Christophe Licitra ◽  
Antoine Chateauminois ◽  
Marc Veillerot
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Depth Profiling ◽  
Low Energy

Monomer methylmethacrylate (MMA) incorporated hybrid low-k thin films

2013 ◽  
Vol 9 (6) ◽  
pp. 723-728 ◽  
Author(s):  
Bhavana N. Joshi ◽  
A. M. Mahajan
Keyword(s):  
Thin Films ◽  
Low K
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