Mean free path of hot electrons at the surface of boron‐doped silicon

1975 ◽  
Vol 46 (6) ◽  
pp. 2612-2619 ◽  
Author(s):  
J. F. Verwey ◽  
R. P. Kramer ◽  
B. J. de Maagt
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons ◽  
Boron Doped ◽  
Doped Silicon

Mean Free Path of Hot Electrons and Holes in Metals

1963 ◽  
Vol 10 (1) ◽  
pp. 7-9 ◽  
Author(s):  
R. N. Stuart ◽  
F. Wooten ◽  
W. E. Spicer
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons

Investigation of the mean free path of hot electrons in GaAs-AlGaAs heterostructures

1994 ◽  
Vol 9 (2) ◽  
pp. 193-197 ◽  
Author(s):  
C Kiener ◽  
C Wirner ◽  
W Boxleitner ◽  
E Gornik ◽  
G Bohm ◽  
...  
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons ◽  
The Mean

Ballistic Mean Free Path Measurements of Hot Electrons in Au Films

1965 ◽  
Vol 15 (16) ◽  
pp. 659-661 ◽  
Author(s):  
C. R. Crowell ◽  
S. M. Sze
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons

Long-mean-free-path ballistic hot electrons in high-purity GaAs

1996 ◽  
Vol 54 (24) ◽  
pp. R17280-R17283 ◽  
Author(s):  
B. Brill ◽  
M. Heiblum
Keyword(s):  
Free Path ◽  
High Purity ◽  
Mean Free Path ◽  
Hot Electrons

scholarly journals Coupling Effect of Molecular Chain Displacement and Carrier Trap Characteristics on DC Breakdown of HDPE/LDPE Blend Insulation

Polymers ◽  
2020 ◽  
Vol 12 (3) ◽  
pp. 589 ◽  
Author(s):  
Zhonglei Li ◽  
Mingsheng Fan ◽  
Zhuoyan Zhong ◽  
Boxue Du
Keyword(s):  
Dielectric Relaxation ◽  
Free Path ◽  
Breakdown Strength ◽  
Coupling Effect ◽  
Mean Free Path ◽  
Molecular Chain ◽  
Trap Density ◽  
Hot Electrons ◽  
Relaxation Strength ◽  
Carrier Trap

This work focuses on the coupling effect of molecular chain displacement and trap characteristics on direct current (DC) breakdown properties of high density/low density polyethylene (HDPE/LDPE) blend insulation. Frequency domain spectroscopy (FDS) and isothermal discharge current (IDC) are used to characterize the dielectric relaxation and trap characteristics of HDPE/LDPE blends. A DC breakdown model is proposed to reveal the mechanisms of the molecular chain displacement and carrier trap on the DC breakdown strength. The dielectric relaxation α and δ present segmental motions and thermal ion polarization behaviours of HDPE/LDPE blends, respectively. α dielectric relaxation strength (Δεα) increases as the amount of HDPE increases from 0 to 5 wt%, and then declines with a further increase of HDPE content to 20 wt%. According to the velocity equation, the increase of Δεα will increase the molecular chain displacement, resulting in a larger free volume, which will provide electrons with larger free path λ to form hot electrons. A positive correlation exists between the activation energy of the dielectric relaxation process δ and trap density, and the increase of δ dielectric relaxation strength (Δεδ) will adversely affect the breakdown strength of the specimen. HDPE/LDPE blends with 15 wt% HDPE content have lower Δεα and lowest Δεδ, which decreases the mean free path λ of molecular chain and thermal ion polarization. At the same time, it has the highest deep trap density, thus increasing the probability of hot electrons being captured and improving the DC breakdown strength. It is concluded the breakdown of the dielectric is synergistically affected by the molecular chain displacement and carrier trap.

Optical Determination of Mean Free Path of Hot Electrons in Metals

1980 ◽  
Vol 102 (1) ◽  
pp. 227-234 ◽  
Author(s):  
N. Kroó ◽  
Zs. Szentirmay ◽  
J. Félszerfalvi
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons ◽  
Optical Determination

Mean Free Path of Hot Electrons and Holes in Metals

1963 ◽  
Vol 10 (3) ◽  
pp. 119-119 ◽  
Author(s):  
R. N. Stuart ◽  
F. Wooten ◽  
W. E. Spicer
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons

Long mean free path of hot electrons selectively injected to higher subbands

1990 ◽  
Vol 65 (17) ◽  
pp. 2181-2184 ◽  
Author(s):  
B. Laikhtman ◽  
U. Sivan ◽  
A. Yacoby ◽  
C. P. Umbach ◽  
M. Heiblum ◽  
...  
Keyword(s):  
Free Path ◽  
Mean Free Path ◽  
Hot Electrons

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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