Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors

2009 ◽  
Vol 106 (6) ◽  
pp. 063719 ◽  
Author(s):  
Michele Moresco ◽  
Francesco Bertazzi ◽  
Enrico Bellotti
Keyword(s):  
High Field ◽  
Carrier Transport ◽  
Impact Ionization ◽  
Avalanche Photodetectors

Theory of high field carrier transport and impact ionization in ZnO

2010 ◽  
Author(s):  
Francesco Bertazzi ◽  
Michele Penna ◽  
Michele Goano ◽  
Enrico Bellotti
Keyword(s):  
High Field ◽  
Carrier Transport ◽  
Impact Ionization

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

Nonresonant carrier transport through high-field domains in semiconductor superlattices

1995 ◽  
Vol 51 (15) ◽  
pp. 9943-9951 ◽  
Author(s):  
S. H. Kwok ◽  
H. T. Grahn ◽  
M. Ramsteiner ◽  
K. Ploog ◽  
F. Prengel ◽  
...  
Keyword(s):  
High Field ◽  
Carrier Transport ◽  
Semiconductor Superlattices

Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopy

2008 ◽  
Vol 93 (12) ◽  
pp. 121115 ◽  
Author(s):  
Yulei Shi ◽  
Qing-li Zhou ◽  
Cunlin Zhang ◽  
Bin Jin
Keyword(s):  
High Field ◽  
Carrier Transport ◽  
Probe Spectroscopy

scholarly journals Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors

2020 ◽  
Vol 4 (1) ◽  
Author(s):  
Ansh ◽  
Jeevesh Kumar ◽  
Gaurav Sheoran ◽  
Mayank Shrivastava
Keyword(s):  
Low Temperature ◽  
High Field ◽  
Impact Ionization ◽  
Operating Regime ◽  
Kelvin Probe ◽  
Current Decay ◽  
Electrical Stress ◽  
Field Operation ◽  
Gate Control ◽  
And Performance

Abstract Device and material reliability of 2-dimensional materials, especially CVD-grown MoS2, has remained un-addressed since 2011 when the first TMDC transistor was reported. For its potential application in next generation electronics, it is imperative to update our understanding of mechanisms through which MoS2 transistors’ performance degrades under long-term electrical stress. We report, for CVD-grown monolayer MoS2, results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate bias and stress cycles. During low field operation, current is found to saturate after hundreds of seconds of operation with the current decay time constant being a function of temperature and stress cycle. High field operation, especially at low temperature, leads to impact ionization assisted material and device degradation. It is found that high field operation at low temperature results in amorphization of the channel and is verified by device and kelvin probe force microscopy (KPFM) analyses. In general, a prolonged room temperature operation of CVD-grown MoS2 transistors lead to degraded gate control, higher OFF state current and negative shift in threshold voltage (VT). This is further verified, through micro-Raman and photoluminescence spectroscopy, which suggest that a steady state DC electrical stress leads to the formation of localized low resistance regions in the channel and a subsequent loss of transistor characteristics. Our findings unveil unique mechanism by which CVD MoS2 undergoes material degradation under electrical stress and subsequent breakdown of transistor behavior. Such an understanding of material and device reliability helps in determining the safe operating regime from device as well as circuit perspective.

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