Small single-crystal silicon cantilevers formed by crystal facets for atomic force microscopy

2009 ◽  
Vol 80 (9) ◽  
pp. 095104 ◽  
Author(s):  
Kazuhisa Nakagawa ◽  
Gen Hashiguchi ◽  
Hideki Kawakatsu
1997 ◽  
Vol 12 (12) ◽  
pp. 3219-3224 ◽  
Author(s):  
Vilas N. Koinkar ◽  
Bharat Bhushan

Atomic force microscopy (AFM) is commonly used for microwear/machining studies of materials at very light loads. To understand material removal mechanism on the microscale, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies were conducted on the microworn/machined single-crystal silicon. SEM studies of micromachined single-crystal silicon indicate that at light loads material is removed by ploughing. Fine particulate debris is observed at light loads. At higher loads, cutting type and ribbon-like debris were observed. This debris is loose and can be easily removed by scanning with an AFM tip. TEM images of a wear mark generated at 40 μN show bend contours in and around the wear mark, suggesting that there are residual stresses. Dislocations, cracks, or any special features were not observed inside or outside wear marks using plan-view TEM. Therefore, material is mostly removed in a brittle manner or by chipping without major dislocation activity, crack formation, and phase transformation at the surface. However, presence of ribbon-like debris suggests some plastic deformation as well.


2000 ◽  
Vol 6 (S2) ◽  
pp. 1088-1089
Author(s):  
A. Domenicucci ◽  
R. Murphy ◽  
D. Sadanna ◽  
S. Klepeis

Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (>1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.


2015 ◽  
Vol 1088 ◽  
pp. 779-782
Author(s):  
Xiao Jing Yang ◽  
Yong Li ◽  
Wei Xing Zhang

The experiment of cutting mechanical properties of single crystal silicon surface in the micro-nanoscale is researched using nanoindenter and atomic force microscopy. The result of the experiment shows that: in the constant load, the impact of different scratching velocity for single crystal silicon surface scratch groove width and chip accumulation volume are not big; but the cutting force and friction coefficient are not increases with the scratching velocity increases; when the scratching speed is certain, the size of load has a greater impact on the cutting mechanical properties of single crystal silicon surface, with the increase of the load, the cutting force increases, but the cutting force is not linearly growth.


1994 ◽  
Vol 332 ◽  
Author(s):  
Bharat Bhushan ◽  
Vilas N. Koinkar ◽  
J. Ruan

ABSTRACTWe have used atomic force microscopy (AFM) and friction force microscopy (FFM) techniques for microtribological studies including microscale friction, nanowear, nanoscratching and nanoindentation hardness measurements. The microscale friction studies on a gold ruler sample demonstrated that the local variation in friction correspond to a change of local surface slope, and this correlation is explained by a friction mechanism. Directionality effect is also observed as the sample was scanned in either direction. Nanoscratching, nanowear and nanoindentation hardness studies were performed on single-crystal silicon. Wear rates of single crystal silicon are approximately constant for various loads and test duration. Nanoindentation hardness studies show that AFM technique allows the hardness measurements of surface monolayers and ultra thin films in multilayered structures at very shallow depths and low loads. The AFM technique has also been shown to be useful for nanofabrication.


1995 ◽  
Vol 148 (1-2) ◽  
pp. 201-206 ◽  
Author(s):  
Kazuo Onuma ◽  
Atsuo Ito ◽  
Tetsuya Tateishi ◽  
Tetsuya Kameyama

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