Wide-bandgap high-k Y2O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric

C. X. Li; P. T. Lai

doi:10.1063/1.3182741

Wide-bandgap high-k Y2O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric

Applied Physics Letters ◽

10.1063/1.3182741 ◽

2009 ◽

Vol 95 (2) ◽

pp. 022910 ◽

Cited By ~ 24

Author(s):

C. X. Li ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

High Field ◽

Gate Dielectric ◽

Wide Bandgap ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Field Reliability

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Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

Applied Physics Letters ◽

10.1063/1.3462301 ◽

2010 ◽

Vol 97 (2) ◽

pp. 022903 ◽

Cited By ~ 28

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

Applied Physics A ◽

10.1007/s00339-010-5665-5 ◽

2010 ◽

Vol 99 (4) ◽

pp. 903-906 ◽

Cited By ~ 12

Author(s):

H. X. Xu ◽

J. P. Xu ◽

C. X. Li ◽

C. L. Chan ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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Improved high-field reliability for a SiC metal–oxide–semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric

Journal of Applied Physics ◽

10.1063/1.2776254 ◽

2007 ◽

Vol 102 (5) ◽

pp. 054515 ◽

Cited By ~ 21

Author(s):

L. M. Lin ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Field ◽

Gate Dielectric ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Field Reliability

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

Applied Physics Letters ◽

10.1063/1.4818000 ◽

2013 ◽

Vol 103 (9) ◽

pp. 092901 ◽

Cited By ~ 24

Author(s):

L. S. Wang ◽

J. P. Xu ◽

S. Y. Zhu ◽

Y. Huang ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Mismatch of dielectric constants at the interface of nanometer metal-oxide-semiconductor devices with high-K gate dielectric impacts on the inversion charge density

Pramana ◽

10.1007/s12043-011-0052-0 ◽

2011 ◽

Vol 76 (4) ◽

pp. 657-666 ◽

Cited By ~ 4

Author(s):

LING-FENG MAO

Keyword(s):

Metal Oxide ◽

Charge Density ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Dielectric Constants ◽

Oxide Semiconductor ◽

High K ◽

Inversion Charge ◽

High K Gate Dielectric

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High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Applied Physics Letters ◽

10.1063/1.4979101 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123506 ◽

Cited By ~ 5

Author(s):

L. N. Liu ◽

H. W. Choi ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor ◽

High K Gate Dielectric

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Role of Interfacial Nitrogen on the High-Field Reliability of NO-Grown SiO2/6H-SiC Metal-Oxide-Semiconductor Devices: An X-Ray Photoelectron Spectroscopy Study

Advanced Science Engineering and Medicine ◽

10.1166/asem.2014.1608 ◽

2014 ◽

Vol 6 (9) ◽

pp. 1020-1023

Author(s):

C. Chakraborty ◽

C. Bose ◽

S. Chakraborty ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

High Field ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Spectroscopy Study ◽

X Ray ◽

Field Reliability

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Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

ECS Transactions ◽

10.1149/1.3569925 ◽

2019 ◽

Vol 35 (3) ◽

pp. 325-332 ◽

Cited By ~ 2

Author(s):

T. Das ◽

Chandreswar Mahata ◽

G Sutradhar ◽

P K Bose ◽

C.K. Maiti

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Device ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

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