Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n-type silicon/n-type silicon

2009 ◽  
Vol 95 (3) ◽  
pp. 033502 ◽  
Author(s):  
Akihito Ikedo ◽  
Takahiro Kawashima ◽  
Takeshi Kawano ◽  
Makoto Ishida
Keyword(s):  
Vapor Liquid Solid ◽  
Type Silicon ◽  
Vertically Aligned ◽  
Silicon Microwire ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–liquid–solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy

2004 ◽  
Vol 464-465 ◽  
pp. 244-247 ◽  
Author(s):  
S. Bhunia ◽  
T. Kawamura ◽  
S. Fujikawa ◽  
H. Nakashima ◽  
K. Furukawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Vapor Liquid Solid ◽  
Vertically Aligned ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vertically Aligned Ge Nanowires on Flexible Plastic Films Synthesized by (111)-Oriented Ge Seeded Vapor–Liquid–Solid Growth

2015 ◽  
Vol 7 (32) ◽  
pp. 18120-18124 ◽  
Author(s):  
Kaoru Toko ◽  
Mitsuki Nakata ◽  
Wipakorn Jevasuwan ◽  
Naoki Fukata ◽  
Takashi Suemasu
Keyword(s):  
Vapor Liquid Solid ◽  
Plastic Films ◽  
Vertically Aligned ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1681
Author(s):  
Hadi Hijazi ◽  
Vladimir G. Dubrovskii
Keyword(s):  
Surface Energy ◽  
Continuous Process ◽  
Vapor Liquid Solid ◽  
Gaas Nanowires ◽  
Monolayer Growth ◽  
Surface Energetics ◽  
Monolayer Expansion ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

The vapor–liquid–solid growth of III-V nanowires proceeds via the mononuclear regime, where only one island nucleates in each nanowire monolayer. The expansion of the monolayer is governed by the surface energetics depending on the monolayer size. Here, we study theoretically the role of surface energy in determining the monolayer morphology at a given coverage. The optimal monolayer configuration is obtained by minimizing the surface energy at different coverages for a set of energetic constants relevant for GaAs nanowires. In contrast to what has been assumed so far in the growth modeling of III-V nanowires, we find that the monolayer expansion may not be a continuous process. Rather, some portions of the already formed monolayer may dissolve on one of its sides, with simultaneous growth proceeding on the other side. These results are important for fundamental understanding of vapor–liquid–solid growth at the atomic level and have potential impacts on the statistics within the nanowire ensembles, crystal phase, and doping properties of III-V nanowires.

Vapor–Liquid–Solid Growth of Endotaxial Semiconductor Nanowires

Nano Letters ◽  
2012 ◽  
Vol 12 (11) ◽  
pp. 5565-5570 ◽  
Author(s):  
Shaozhou Li ◽  
Xiao Huang ◽  
Qing Liu ◽  
Xiehong Cao ◽  
Fengwei Huo ◽  
...  
Keyword(s):  
Semiconductor Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

scholarly journals Vapor-Liquid-Solid Growth and Properties of One Dimensional PbO and PbO/SnO2 Nanowires

2022 ◽  
Author(s):  
Nikolaos Kelaidis ◽  
Matthew Zervos ◽  
Nektarios Lathiotakis ◽  
Alexander Chroneos ◽  
Eugenia Tanasă ◽  
...  
Keyword(s):  
Vapor Liquid Solid ◽  
One Dimensional ◽  
Sno2 Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

PbO nanowires have been obtained via a self-catalyzed, vapor-liquid-solid mechanism and the reaction of Pb with O2 between 200°C and 300°C at 10 Pa. These had the form of tapes...

Morphology control of GaN nanowires by vapor-liquid-solid growth

2008 ◽  
Vol 5 (9) ◽  
pp. 3001-3003 ◽  
Author(s):  
Y. Inoue ◽  
A. Tajima ◽  
A. Ishida ◽  
H. Mimura
Keyword(s):  
Morphology Control ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid
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