Effects of target bias voltage in magnetic tunnel junctions grown by ion beam deposition

2009 ◽  
Vol 106 (1) ◽  
pp. 013905 ◽  
Author(s):  
Wei Chen ◽  
Dao N. H. Nam ◽  
Jiwei Lu ◽  
Kevin G. West ◽  
Stuart A. Wolf
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Ion Beam ◽  
Magnetic Tunnel Junctions ◽  
Ion Beam Deposition ◽  
Beam Deposition

Spin Transfer on Low Resistance-Area MgO-Based Magnetic Tunnel Junctions Prepared by Ion Beam Deposition

2010 ◽  
Vol 46 (6) ◽  
pp. 2002-2004 ◽  
Author(s):  
Jie Yang ◽  
Rita J. Macedo ◽  
Mariam G. Debs ◽  
Ricardo Ferreira ◽  
Susana Cardoso ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Ion Beam ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer ◽  
Low Resistance ◽  
Ion Beam Deposition ◽  
Beam Deposition

Influence of substrate bias voltage on properties of Pt thin films deposited by non-mass separated ion beam deposition method

2009 ◽  
Vol 63 (26) ◽  
pp. 2181-2184 ◽  
Author(s):  
Joon Woo Bae ◽  
Jae-Won Lim ◽  
Kouji Mimura ◽  
Masahito Uchikoshi ◽  
Mitsuhiro Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Ion Beam ◽  
Substrate Bias ◽  
Deposition Method ◽  
Substrate Bias Voltage ◽  
Ion Beam Deposition ◽  
Influence Of Substrate ◽  
Beam Deposition

Effect of Substrate Bias on Structure and Properties of W incorporated Diamond-like Carbon Films

2004 ◽  
Vol 821 ◽  
Author(s):  
Ai-Ying Wang ◽  
Kwang-Ryeol Lee
Keyword(s):  
Bias Voltage ◽  
Ion Beam ◽  
Carbon Matrix ◽  
Peak Position ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Negative Bias Voltage ◽  
Ion Beam Deposition ◽  
Wide Range ◽  
Beam Deposition

AbstractW incorporated diamond-like carbon (W-DLC) films were deposited on silicon (100) wafers by a hybrid deposition method combining ion beam deposition of carbon with DC magnetron sputtering of tungsten. During the films deposition, a wide range of negative bias voltage from 0 to -600 V was applied. W concentration in the film could be controlled by varying the Ar/C6H6 ratio in the supplying gas. In the present experimental condition, WC1−x nano-sized particles were not observed in the amorphous carbon matrix. Regardless of the W concentration in the film, it was found that the G-peak position of the Raman spectra had a lowest value at a bias voltage of - 200 V, which represents the highest sp3 bond fraction in the film. The highest residual stress, hardness and Young's modulus were also observed when the bias voltage was -200 V. This result shows that the mechanical properties of W-DLC films were mainly dependent on the atomic bond structure of carbon. On the other hand, the electrical resistivity significantly decreased by the W incorporation.

scholarly journals Influence of Substrate Bias Voltage on the Properties of Cu Thin Films by Sputter Type Ion Beam Deposition

2002 ◽  
Vol 43 (6) ◽  
pp. 1403-1408 ◽  
Author(s):  
Jae-Won Lim ◽  
Yukio Ishikawa ◽  
Kiyoshi Miyake ◽  
Mutsuo Yamashita ◽  
Minoru Isshiki
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Ion Beam ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Ion Beam Deposition ◽  
Influence Of Substrate ◽  
Beam Deposition

Ion beam deposition and oxidation of spin-dependent tunnel junctions

1999 ◽  
Vol 35 (5) ◽  
pp. 2952-2954 ◽  
Author(s):  
S. Cardoso ◽  
V. Gehanno ◽  
R. Ferreira ◽  
P.P. Freitas
Keyword(s):  
Tunnel Junctions ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Effect of substrate bias voltage on the purity of Cu films deposited by non-mass separated ion beam deposition

2003 ◽  
Vol 434 (1-2) ◽  
pp. 30-33 ◽  
Author(s):  
J.-W. Lim ◽  
K. Mimura ◽  
K. Miyake ◽  
M. Yamashita ◽  
M. Isshiki
Keyword(s):  
Bias Voltage ◽  
Ion Beam ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Cu Films ◽  
Ion Beam Deposition ◽  
Beam Deposition
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