Moderately anisotropic field-effect mobility in dinaphtho[2,3-b:2′,3′-f]thiopheno[3,2-b]thiophenes single-crystal transistors

2009 ◽  
Vol 94 (22) ◽  
pp. 223308 ◽  
Author(s):  
Mayumi Uno ◽  
Y. Tominari ◽  
M. Yamagishi ◽  
I. Doi ◽  
E. Miyazaki ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Anisotropic Field

Anisotropic field effect mobility in single crystal pentacene

2006 ◽  
Vol 88 (25) ◽  
pp. 252106 ◽  
Author(s):  
J. Y. Lee ◽  
S. Roth ◽  
Y. W. Park
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Anisotropic Field

Non-destructive probing of the anisotropy of field-effect mobility in the rubrene single crystal

2007 ◽  
Vol 157 (6-7) ◽  
pp. 257-260 ◽  
Author(s):  
Mang-Mang Ling ◽  
Colin Reese ◽  
Alejandro L. Briseno ◽  
Zhenan Bao
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Non Destructive

Copper Phthalocyanine Single-crystal Field-effect Transistors Stable Above 100°C

2006 ◽  
Vol 937 ◽  
Author(s):  
Koichi Yamada ◽  
Jun Takeya ◽  
Kunji Shigeto ◽  
Kazuhito Tsukagoshi ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Measured Temperature ◽  
Field Effect Mobility ◽  
Crystal Field Effect ◽  
Activation Type

ABSTRACTIntrinsic charge transport of copper phthalocyanine single-crystal field-effect transistors is measured as function of temperature up to above 100°C. The conduction of the accumulated carriers shows hopping-type transport, so that the field-effect mobility increases with temperature following activation-type temperature dependence throughout the measured temperature region. Due to excellent material stability at the high temperature, the mobility values are precisely reproduced after the heat cycles.

Effect of Grain Boundary on the Field-Effect Mobility of Microrod Single Crystal Organic Transistors

2014 ◽  
Vol 14 (11) ◽  
pp. 8153-8157
Author(s):  
Jaekyun Kim ◽  
Jingu Kang ◽  
Sangho Cho ◽  
Byungwook Yoo ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
Organic Transistors ◽  
Field Effect Mobility

Probing the Anisotropic Field-Effect Mobility of Solution-Deposited Dicyclohexyl-α-quaterthiophene Single Crystals

2007 ◽  
Vol 17 (10) ◽  
pp. 1617-1622 ◽  
Author(s):  
S. C. B. Mannsfeld ◽  
J. Locklin ◽  
C. Reese ◽  
M. E. Roberts ◽  
A. J. Lovinger ◽  
...  
Keyword(s):  
Single Crystals ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Anisotropic Field

Temperature Dependence of High-Mobility Poly-Si Tft with Single Grain Boundary

2002 ◽  
Vol 715 ◽  
Author(s):  
In-Hyuk Song ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Activation Energy ◽  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
High Mobility ◽  
Drain Current ◽  
Field Effect Mobility ◽  
Single Grain ◽  
Increasing Temperature ◽  
Channel Region

AbstractWe have fabricated high-mobility TFTs with large lateral grains and investigated the variation of drain current with increasing temperature. The activation energy of drain current in large grain TFTs is found to be higher under the off-state and lower under the on-state than that in small grain TFTs. The field-effect mobility during the on-state is reduced with increasing temperature due to a lattice scattering inside grain. Because the proposed device has large lateral grain in the channel region, the lattice scattering inside the grain would be dominant, which is similar to single crystal Si MOSFETs.

Rapid improvements in charge carrier mobility at ionic liquid/pentacene single crystal interfaces by self-cleaning

2020 ◽  
Vol 22 (11) ◽  
pp. 6131-6135
Author(s):  
Yusuke Morino ◽  
Yasuyuki Yokota ◽  
Hisaya Hara ◽  
Ken-ichi Bando ◽  
Sakurako Ono ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Charge Carrier ◽  
Single Crystal ◽  
Field Effect ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Field Effect Mobility ◽  
Defect Sites ◽  
Self Cleaning ◽  
Crystal Interfaces

The field-effect mobility increases with time for a few hours because of the spontaneous dissolution of the defect sites.

Anisotropic field-effect mobility of pentacene thin-film transistor: Effect of rubbed self-assembled monolayer

2006 ◽  
Vol 89 (17) ◽  
pp. 172103 ◽  
Author(s):  
Shou-Zheng Weng ◽  
Wei-Shan Hu ◽  
Chi-Hsien Kuo ◽  
Yu-Tai Tao ◽  
Liang-Jen Fan ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Self Assembled Monolayer ◽  
Anisotropic Field ◽  
Self Assembled

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal
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