Simple model for wakefield excitation by intense short-pulse laser in underdense plasma

2009 ◽  
Vol 16 (5) ◽  
pp. 053107 ◽  
2021 ◽  
Vol 28 (12) ◽  
pp. 122104
Author(s):  
P. Valenta ◽  
G. M. Grittani ◽  
C. M. Lazzarini ◽  
O. Klimo ◽  
S. V. Bulanov

2003 ◽  
Vol 10 (6) ◽  
pp. 2468-2474 ◽  
Author(s):  
M. Y. Yu ◽  
Wei Yu ◽  
Z. Y. Chen ◽  
J. Zhang ◽  
Y. Yin ◽  
...  

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  

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