On the lateral crystal growth of laser irradiated NiTi thin films

2009 ◽  
Vol 94 (26) ◽  
pp. 261908 ◽  
Author(s):  
A. J. Birnbaum ◽  
Y. Lawrence Yao ◽  
U.-J. Chung ◽  
James. S. Im ◽  
X. Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Lateral Crystal

Advanced Lateral Crystal Growth of a-Si Thin Films by Double-Pulsed Irradiation of All Solid-State Lasers

2003 ◽  
Vol 762 ◽  
Author(s):  
Toshio Kudo ◽  
Koji Seike ◽  
Kazunori Yamazaki ◽  
Hirohito Komori ◽  
Sachi Yawaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Solid State ◽  
Short Axis ◽  
Scanning Direction ◽  
Complete Melting ◽  
Melting Region ◽  
Scanning Step ◽  
Lateral Crystal ◽  
Line Beam

AbstractA compact annealing machine with all solid-state green lasers has been developed, which has the advantage of widely adjustable solidification rate through the delay time control of two long pulses (pulse width ~100ns). Advanced lateral crystal growth (ALCG) process has been proved by the double-pulsed all solid-state laser annealing. The laser beam has a line shape 0.1mm wide and 17mm long, and the beam profile on the short axis is quasi-Gaussian (FWHM 0.1mm). Scanning the line beam along the short axis at the 86% overlapping ratio, the lateral crystal growth area of width 14μm, parallel to the long axis, is sequentially formed at the pitch of 14μm towards the scanning direction. The advanced lateral growth mechanism is easily explained as follows: (1) At the first irradiation, twin seed lines of width 4μm, parallel to the long axis, generates at a boundary between a near-complete melting region and a complete melting region. (2) At the second irradiation of scanning step 14μm, the front seed line in the scanning direction grows symmetrically toward both sides. (3) At the third irradiation of scanning step 2x14μm, the seeds laterally grow until stopped by the growing of seeds on both sides. Finally the ALCG process by the scanning line-beam technique like the current ELA enables us to produce the laterally grown Si thin-films sequentially arranging the belt-shaped texture at the pitch of 14μm. The quality of the laterally grown Si films is quite well except for the projections generated by the bump of lateral growing seeds.

scholarly journals Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Lynn Lee ◽  
Jangmi Baek ◽  
Kyung Sun Park ◽  
Yong-EunKoo Lee ◽  
Nabeen K. Shrestha ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Single Crystal ◽  
Wafer Scale ◽  
Lateral Crystal ◽  
Geometrically Confined

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

2018 ◽  
Vol 18 (7) ◽  
pp. 4103-4110 ◽  
Author(s):  
Jaroslav Barták ◽  
Diego Valdés ◽  
Jiří Málek ◽  
Veronika Podzemná ◽  
Stanislav Slang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Lateral Crystal

Crystal Growth of Silicon Thin Films on Glass by Excimer Laser Annealing: A Molecular-Dynamics Study

2006 ◽  
Vol 45 (5B) ◽  
pp. 4344-4346 ◽  
Author(s):  
Shinji Munetoh ◽  
Takahide Kuranaga ◽  
Byoung Min Lee ◽  
Teruaki Motooka ◽  
Takahiko Endo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Crystal Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films

scholarly journals Crystal Growth Mode Changes during Pulsed Laser Induced Rapid Solidification in Nanoscale Thin Films of Al-Cu Eutectic

2014 ◽  
Vol 20 (S3) ◽  
pp. 1662-1663 ◽  
Author(s):  
Kai Zweiacker ◽  
Can Liu ◽  
Joseph T. McKeown ◽  
Thomas LaGrange ◽  
Bryan W. Reed ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Rapid Solidification ◽  
Pulsed Laser ◽  
Growth Mode

Crystal growth of YBa/sub 2/Cu/sub 3/O/7-X/ thin films prepared by TFA-MOD method

2003 ◽  
Vol 13 (2) ◽  
pp. 2512-2515 ◽  
Author(s):  
T. Ono ◽  
K. Matsumoto ◽  
K. Osamura ◽  
I. Hirabayashi
Keyword(s):  
Thin Films ◽  
Crystal Growth

Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates

2006 ◽  
Vol 980 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Takanori Kiguchi ◽  
Takashi Suemasu ◽  
Takeshi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Crystal Growth ◽  
Magnetron Sputtering ◽  
Iron Silicide ◽  
Rf Magnetron Sputtering ◽  
Single Element ◽  
Stabilized Zirconia ◽  
Crystalline Film ◽  
Anions And Cations

AbstractIron silicide thin films were prepared on silicon (Si) and yittria-stabilized zirconia (YSZ) substrates using RF magnetron sputtering and evaporation methods. Epitaxial b-FeSi2 thin films were grown on (100) and (111) planes of Si and YSZ substrates, while noncrystallized films were deposited on (110) plane of both Si and YSZ substrates. The epitaxial relationships between the b-FeSi2 and YSZ were the same as those between b-FeSi2 and Si, in the case of (100) and (111) planes. It is possible that epitaxial b-FeSi2 film can be grown when substrates and b-FeSi2 surfaces consist of either a single element or only cations, while the crystalline film was not shown when either substrate or b-FeSi2 surface consists of a mixture of anions and cations or iron and silicon.

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