scholarly journals Wafer-scale single-crystal perovskite patterned thin films based on geometrically-confined lateral crystal growth

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Lynn Lee ◽  
Jangmi Baek ◽  
Kyung Sun Park ◽  
Yong-EunKoo Lee ◽  
Nabeen K. Shrestha ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Single Crystal ◽  
Wafer Scale ◽  
Lateral Crystal ◽  
Geometrically Confined

On the lateral crystal growth of laser irradiated NiTi thin films

2009 ◽  
Vol 94 (26) ◽  
pp. 261908 ◽  
Author(s):  
A. J. Birnbaum ◽  
Y. Lawrence Yao ◽  
U.-J. Chung ◽  
James. S. Im ◽  
X. Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Lateral Crystal

Advanced Lateral Crystal Growth of a-Si Thin Films by Double-Pulsed Irradiation of All Solid-State Lasers

2003 ◽  
Vol 762 ◽  
Author(s):  
Toshio Kudo ◽  
Koji Seike ◽  
Kazunori Yamazaki ◽  
Hirohito Komori ◽  
Sachi Yawaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Solid State ◽  
Short Axis ◽  
Scanning Direction ◽  
Complete Melting ◽  
Melting Region ◽  
Scanning Step ◽  
Lateral Crystal ◽  
Line Beam

AbstractA compact annealing machine with all solid-state green lasers has been developed, which has the advantage of widely adjustable solidification rate through the delay time control of two long pulses (pulse width ~100ns). Advanced lateral crystal growth (ALCG) process has been proved by the double-pulsed all solid-state laser annealing. The laser beam has a line shape 0.1mm wide and 17mm long, and the beam profile on the short axis is quasi-Gaussian (FWHM 0.1mm). Scanning the line beam along the short axis at the 86% overlapping ratio, the lateral crystal growth area of width 14μm, parallel to the long axis, is sequentially formed at the pitch of 14μm towards the scanning direction. The advanced lateral growth mechanism is easily explained as follows: (1) At the first irradiation, twin seed lines of width 4μm, parallel to the long axis, generates at a boundary between a near-complete melting region and a complete melting region. (2) At the second irradiation of scanning step 14μm, the front seed line in the scanning direction grows symmetrically toward both sides. (3) At the third irradiation of scanning step 2x14μm, the seeds laterally grow until stopped by the growing of seeds on both sides. Finally the ALCG process by the scanning line-beam technique like the current ELA enables us to produce the laterally grown Si thin-films sequentially arranging the belt-shaped texture at the pitch of 14μm. The quality of the laterally grown Si films is quite well except for the projections generated by the bump of lateral growing seeds.

Crystal growth of (110) and (103) YBa2Cu3O7 thin films in-situ deposited by laser ablation on (110) SrTiO3 single-crystal substrates

1993 ◽  
Vol 132 (3-4) ◽  
pp. 396-404 ◽  
Author(s):  
M. Guilloux-Viry ◽  
C. Thivet ◽  
A. Perrin ◽  
M. Sergent ◽  
M.G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Laser Ablation ◽  
Single Crystal

Single-crystal growth of LiGaO2 for a substrate of GaN thin films

1998 ◽  
Vol 186 (3) ◽  
pp. 409-419 ◽  
Author(s):  
Takao Ishii ◽  
Yasuo Tazoh ◽  
Shintaro Miyazawa
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth

Comparison of Lateral Crystal Growth in Selenium Thin Films and Surface of Bulk Samples

2018 ◽  
Vol 18 (7) ◽  
pp. 4103-4110 ◽  
Author(s):  
Jaroslav Barták ◽  
Diego Valdés ◽  
Jiří Málek ◽  
Veronika Podzemná ◽  
Stanislav Slang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Lateral Crystal

Single-crystal growth of NaCl-structure Al–Cr–N thin films on MgO(001) by magnetron sputter epitaxy

2007 ◽  
Vol 57 (12) ◽  
pp. 1089-1092 ◽  
Author(s):  
H. Willmann ◽  
M. Beckers ◽  
F. Giuliani ◽  
J. Birch ◽  
P.H. Mayrhofer ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Magnetron Sputter

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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