Synthesis and Characterization, Thermal Stability and Magnetic Properties of Metallic Glass Free Layer of Magnetic Tunnel Junctions (abstract)

2009 ◽  
Author(s):  
Joyoung Park ◽  
Jiseon Park ◽  
Haein Yim ◽  
Beverly Karplus Hartline ◽  
Renee K. Horton ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Metallic Glass ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Synthesis And Characterization ◽  
Free Layer

Magnetization Reversal by Spin-Polarized Current in Magnetic Tunnel Junctions with MgO Barriers

2006 ◽  
Vol 45 ◽  
pp. 2633-2639
Author(s):  
Hitoshi Kubota ◽  
A. Fukushima ◽  
Y. Ootani ◽  
S. Yuasa ◽  
K. Ando ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Magnetization Reversal ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Switching Model ◽  
Switching Current ◽  
Experimental Values

Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions were fabricated using UHV magnetron sputtering. Magnetoresistance and spin-transfer switching properties were investigated as a function of Co-Fe-B free layer thickness, between 1.5 nm and 3 nm. The intrinsic switching current and the thermal stability were derived from the pulse duration dependence of the switching current, analyzed based on the thermally activated switching model. Both switching currents, corresponding to parallel (P) to antiparallel (AP) (Ic0 +) and AP to P (Ic0 –) magnetization reversal, were found to be roughly proportional to the free layer thickness. The averaged intrinsic switching current density Jc0 av = (Ic0 +–Ic0 –)/(2A) (where A is the cell area) was in the range of 1–2×107 A/cm2. The experimental values of Jc0 ± agreed with theoretical values, determined taking into account the spintransfer efficiency for the case of magnetic tunnel junction. The thermal stability of the P and AP states was different, but roughly proportional to the free layer thickness in both cases. We attribute this difference to a disparity in the net magnetic field acting on the free layer magnetization in the P and AP states. The average of the thermal stability in the two states varied from 30 to 60 when the free layer thickness was increased. According to our findings, to guarantee the non-volatility of an MRAM device for about 10 years, the Co-Fe-B free layer should be thicker than 2 nm.

Effect of (CoxFe1−x)80B20 Composition on the Magnetic Properties of the Free Layer in Double-Barrier Magnetic Tunnel Junctions

2018 ◽  
Vol 10 (2) ◽  
Author(s):  
Shalabh Srivastava ◽  
Andy Paul Chen ◽  
Tanmay Dutta ◽  
Rajagopalan Ramaswamy ◽  
Jaesung Son ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer ◽  
Double Barrier

scholarly journals Double-Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits

2021 ◽  
Vol 15 (4) ◽  
Author(s):  
Kerem Y. Camsari ◽  
Mustafa Mert Torunbalci ◽  
William A. Borders ◽  
Hideo Ohno ◽  
Shunsuke Fukami
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Characterization of magnetic tunnel junctions (MTJ) with magnetostrictive free layer materials

2004 ◽  
Vol 272-276 ◽  
pp. 2023-2024 ◽  
Author(s):  
M. Löhndorf ◽  
S. Dokupil ◽  
J. Wecker ◽  
M. Rührig ◽  
E. Quandt
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer

Annealing-Induced Solid-Phase Epitaxy at Interfaces between CoFeB Layers and MgO Barrier-Layer in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions and Their Magnetic Properties

2019 ◽  
Vol 16 (45) ◽  
pp. 37-44 ◽  
Author(s):  
Yoshitaka Kitamoto ◽  
Takashi Takeuchi ◽  
Koji Tsunekawa ◽  
Young-suk Choi ◽  
Yoshinori Nagamine ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Barrier Layer ◽  
Tunnel Junctions ◽  
Solid Phase ◽  
Magnetic Tunnel Junctions ◽  
Solid Phase Epitaxy

Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance

2016 ◽  
Vol 10 (1) ◽  
pp. 013001 ◽  
Author(s):  
Motoya Shinozaki ◽  
Eriko Hirayama ◽  
Shun Kanai ◽  
Hideo Sato ◽  
Fumihiro Matsukura ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Free Layer
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