Characterizing the detection system nonlinearity, internal inelastic background, and transmission function of an electron spectrometer for use in x-ray photoelectron spectroscopy

2009 ◽  
Vol 80 (5) ◽  
pp. 053108 ◽  
Author(s):  
R. C. Wicks ◽  
N. J. C. Ingle
Keyword(s):  
Photoelectron Spectroscopy ◽  
Detection System ◽  
Transmission Function ◽  
Electron Spectrometer ◽  
X Ray ◽  
System Nonlinearity

Determination of the Thickness of Sio2-Layers on Si by X-Ray Analysis and by X-Ray Photoelectron Spectroscopy

1979 ◽  
Vol 23 ◽  
pp. 223-230
Author(s):  
Maria F. Ebel ◽  
H. Ebel ◽  
J. Wernisch
Keyword(s):  
Photoelectron Spectroscopy ◽  
Count Rate ◽  
Silicon Wafers ◽  
Electron Spectrometer ◽  
Si Substrate ◽  
Oxide Layers ◽  
X Ray ◽  
Information Depth ◽  
Pass Through

It is feasible to investigate the thickness of oxide layers on silicon wafers by X-radiation in the 0.1-10 nm thickness range. For example, X-ray photoelectron spectroscopy (XPS) is a well applicable technique, with information depth of a few nm. Fig. 1 presents the principle of this method. An impinging characteristic X-radiation hν (e.g. Al Kα) count rate ejects Si 2p photoelectrons from the Si-substrate (d), with count rate n2, which, on their way to the electron spectrometer, have to pass through the SiOx-interface (c), the SiO2-layer (b) and the contamination overlayer (a), whereas Si 2p photoelectrons ejected from the SiO2-layer, with count rate n2 have just to penetrate the contamination overlayer. The Si 2p electrons originating from the SiOx-interface, for the situation shown in Fig. 1, can be added to the substrate count rate.

Novel time-of-flight electron spectrometer optimized for time-resolved soft-x-ray photoelectron spectroscopy

2006 ◽  
Vol 77 (4) ◽  
pp. 043105 ◽  
Author(s):  
A. Paulus ◽  
C. Winterfeldt ◽  
T. Pfeifer ◽  
D. Walter ◽  
G. Gerber ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Time Of Flight ◽  
Electron Spectrometer ◽  
Time Resolved ◽  
X Ray

The use of ionic liquids for the determination of the spectrometer transmission function in X-ray photoelectron spectroscopy (XPS)

2019 ◽  
Vol 233 ◽  
pp. 51-56 ◽  
Author(s):  
Markus Holzweber ◽  
Andreas Lippitz ◽  
Ronald Hesse ◽  
Reinhard Denecke ◽  
Wolfgang S.M. Werner ◽  
...  
Keyword(s):  
Ionic Liquids ◽  
Photoelectron Spectroscopy ◽  
Transmission Function ◽  
X Ray

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger
Keyword(s):  
Photoelectron Spectroscopy ◽  
Two Dimensional ◽  
X Ray

BONDS IN AMORPHOUS Nb1-xSixSTUDIED BY X-RAY EMISSION AND X-RAY PHOTOELECTRON SPECTROSCOPY

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-1025-C9-1028 ◽  
Author(s):  
W. ZAHOROWSKI ◽  
A. SIMUNEK ◽  
G. WIECH ◽  
K. SÖLDNER ◽  
R. KNAUF ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

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