Effects of anisotropic elasticity on stress concentration in micro mechanical structures fabricated on (001) single-crystal silicon films

Tsuyoshi Ikehara; Toshiyuki Tsuchiya

doi:10.1063/1.3124368

Effects of anisotropic elasticity on stress concentration in micro mechanical structures fabricated on (001) single-crystal silicon films

Journal of Applied Physics ◽

10.1063/1.3124368 ◽

2009 ◽

Vol 105 (9) ◽

pp. 093524 ◽

Cited By ~ 14

Author(s):

Tsuyoshi Ikehara ◽

Toshiyuki Tsuchiya

Keyword(s):

Stress Concentration ◽

Single Crystal ◽

Single Crystal Silicon ◽

Anisotropic Elasticity ◽

Silicon Films ◽

Crystal Silicon

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Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.124001 ◽

2010 ◽

Vol 49 (12) ◽

pp. 124001 ◽

Cited By ~ 6

Author(s):

Masahiro Mitani ◽

Takahiko Endo ◽

Shinzo Tsuboi ◽

Takashi Okada ◽

Genshiro Kawachi ◽

...

Keyword(s):

Thin Film ◽

Single Crystal ◽

Excimer Laser ◽

Crystallographic Orientation ◽

Thin Film Transistor ◽

Single Crystal Silicon ◽

Silicon Films ◽

Crystal Silicon ◽

Pseudo Single Crystal

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Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates

Proceedings of Second International Workshop on Active Matrix Liquid Crystal Displays ◽

10.1109/amlcd.1995.540974 ◽

2002 ◽

Cited By ~ 5

Author(s):

D.N. Kouvatsos ◽

G.T. Sarcona ◽

D. Tsoukalas ◽

M.K. Hatalis ◽

D. Goustouridis ◽

...

Keyword(s):

Thin Film ◽

Single Crystal ◽

Low Temperatures ◽

Thin Film Transistors ◽

Single Crystal Silicon ◽

Silicon Films ◽

Crystal Silicon ◽

Glass Substrates

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Thermal conduction in doped single-crystal silicon films

Journal of Applied Physics ◽

10.1063/1.1458057 ◽

2002 ◽

Vol 91 (8) ◽

pp. 5079-5088 ◽

Cited By ~ 298

Author(s):

M. Asheghi ◽

K. Kurabayashi ◽

R. Kasnavi ◽

K. E. Goodson

Keyword(s):

Single Crystal ◽

Thermal Conduction ◽

Single Crystal Silicon ◽

Silicon Films ◽

Crystal Silicon

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Fabrication and probabilistic fracture strength prediction of high-aspect-ratio single crystal silicon carbide microspecimens with stress concentration

Thin Solid Films ◽

10.1016/j.tsf.2006.01.041 ◽

2007 ◽

Vol 515 (6) ◽

pp. 3283-3290 ◽

Cited By ~ 17

Author(s):

N.N. Nemeth ◽

L.J. Evans ◽

O.M. Jadaan ◽

W.N. Sharpe ◽

G.M. Beheim ◽

...

Keyword(s):

Silicon Carbide ◽

Stress Concentration ◽

Aspect Ratio ◽

Single Crystal ◽

Fracture Strength ◽

High Aspect Ratio ◽

Single Crystal Silicon ◽

Strength Prediction ◽

Crystal Silicon

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Preparation and investigation of single crystal silicon films on sapphire and MOS transistors based on them

Vacuum ◽

10.1016/0042-207x(72)90566-0 ◽

1972 ◽

Vol 22 (3) ◽

pp. 121

Keyword(s):

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Films ◽

Mos Transistors ◽

Crystal Silicon

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Minority-carrier lifetime in dielectrically isolated single-crystal silicon films defined by electrochemical etching

Solid-State Electronics ◽

10.1016/0038-1101(74)90090-2 ◽

1974 ◽

Vol 17 (7) ◽

pp. 675-681 ◽

Cited By ~ 14

Author(s):

T.I. Kamins

Keyword(s):

Single Crystal ◽

Carrier Lifetime ◽

Minority Carrier ◽

Electrochemical Etching ◽

Single Crystal Silicon ◽

Minority Carrier Lifetime ◽

Silicon Films ◽

Crystal Silicon

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Directional growth of single-crystal silicon films across silicon carbide by a moving deposition-zone technique

Microelectronics Reliability ◽

10.1016/0026-2714(67)90298-3 ◽

1967 ◽

Vol 6 (3) ◽

pp. 247

Keyword(s):

Silicon Carbide ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Films ◽

Crystal Silicon ◽

Directional Growth ◽

Deposition Zone

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Single Crystal Silicon Films on Amorphous Insulators: Growth by Lateral Nucleated Epitaxy Using Scanning Laser and Electron Beams and Evaluation by Electron Backscattering Contrast

Journal of The Electrochemical Society ◽

10.1149/1.2123682 ◽

1982 ◽

Vol 129 (12) ◽

pp. 2802-2808 ◽

Cited By ~ 21

Author(s):

T. O. Sedgwick ◽

R. H. Geiss ◽

S. W. Depp ◽

V. E. Hanchett ◽

B. G. Huth ◽

...

Keyword(s):

Single Crystal ◽

Electron Beams ◽

Single Crystal Silicon ◽

Silicon Films ◽

Scanning Laser ◽

Crystal Silicon ◽

Electron Backscattering

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Hall mobility in dielectrically isolated single-crystal silicon films defined by electrochemical etching

Microelectronics Reliability ◽

10.1016/0026-2714(75)90407-2 ◽

1975 ◽

Vol 14 (1) ◽

pp. 28

Keyword(s):

Single Crystal ◽

Hall Mobility ◽

Electrochemical Etching ◽

Single Crystal Silicon ◽

Silicon Films ◽

Crystal Silicon

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Minority-carrier lifetime in dielectrically isolated single-crystal silicon films defined by electrochemical etching

Microelectronics Reliability ◽

10.1016/0026-2714(75)90408-4 ◽

1975 ◽

Vol 14 (1) ◽

pp. 28

Keyword(s):

Single Crystal ◽

Carrier Lifetime ◽

Minority Carrier ◽

Electrochemical Etching ◽

Single Crystal Silicon ◽

Minority Carrier Lifetime ◽

Silicon Films ◽

Crystal Silicon

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