Near-infrared intersubband absorption in molecular-beam epitaxy-grown lattice-matched InAlN/GaN superlattices

2009 ◽  
Vol 94 (16) ◽  
pp. 161111 ◽  
Author(s):  
O. Malis ◽  
C. Edmunds ◽  
M. J. Manfra ◽  
D. L. Sivco
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Lattice Matched

Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy

1999 ◽  
Vol 201-202 ◽  
pp. 1077-1080 ◽  
Author(s):  
Teruo Mozume ◽  
Haruhiko Yoshida ◽  
Arup Neogi ◽  
Makoto Kudo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Intersubband Absorption

Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations

1998 ◽  
Vol 83 (4) ◽  
pp. 2266-2271 ◽  
Author(s):  
W. J. Keeler ◽  
G. A. Keeler ◽  
D. A. Harrison ◽  
Z. R. Wasilewski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Matched

Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy

2020 ◽  
Vol 116 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jiaming Li ◽  
Chenjia Tang ◽  
Peng Du ◽  
Yilan Jiang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Lattice Matched

A Study of GaAs1–xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

2019 ◽  
Vol 2 (7) ◽  
pp. 4528-4537 ◽  
Author(s):  
Surya Nalamati ◽  
Manish Sharma ◽  
Prithviraj Deshmukh ◽  
Jeffrey Kronz ◽  
Robert Lavelle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Monolayer Graphene ◽  
Infrared Photodetectors

In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 1499-1503 ◽  
Author(s):  
Y. Kawamura ◽  
A. Kondo ◽  
M. Fujimoto ◽  
T. Higashino ◽  
H. Takasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Lattice Matched

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

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