scholarly journals Tailoring carbon nanotips in the plasma-assisted chemical vapor deposition: Effect of the process parameters

2009 ◽  
Vol 105 (8) ◽  
pp. 083303 ◽  
Author(s):  
B. B. Wang ◽  
K. Ostrikov
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Effect

Effects of Process Parameters on Graphene Growth Via Low-Pressure Chemical Vapor Deposition

2020 ◽  
Vol 8 (3) ◽  
Author(s):  
Byoungdo Lee ◽  
Weishen Chu ◽  
Wei Li
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Growth ◽  
Low Pressure ◽  
Large Set ◽  
Graphene Growth ◽  
Pressure Chemical

Abstract Graphene has attracted enormous research interest due to its extraordinary material properties. Process control to achieve high-quality graphene is indispensable for graphene-based applications. This research investigates the effects of process parameters on graphene quality in a low-pressure chemical vapor deposition (LPCVD) graphene growth process. A fractional factorial design of experiment is conducted to provide understanding on not only the main effect of process parameters, but also the interaction effect among them. Graphene quality including the number of layers and grain size is analyzed. To achieve monolayer graphene with large grain size, a condition with low CH4–H2 ratio, short growth time, high growth pressure, high growth temperature, and slow cooling rate is recommended. This study considers a large set of process parameters with their interaction effects and provides guidelines to optimize graphene growth via LPCVD focusing on the number of graphene layers and the grain size.

Low Temperature SiGe Heteroepitaxy by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition

1995 ◽  
Vol 379 ◽  
Author(s):  
Sung-Jae Joo ◽  
Ki-Hyun Hwang ◽  
Seok-Hee Hwang ◽  
Euijoon Yoon ◽  
Ki-Woong Whang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Epitaxial Layers

ABSTRACTDislocation-free Si1−xGex epilayers are successfully grown on (100) silicon at 440°C by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD). The effects of process parameters on the crystallinity of Si1−xGex epitaxial layers were studied. As the GeH4 flow rate increases and consequently Ge fraction increases above 20%, Si1−xGex epilayers become damaged heavily by ions. When Ge fraction is larger than 20%, process parameters like total pressure need to be adjusted to reduce the ion flux for high quality Sil−xGex. Growth rate of Si1−xGex epitaxial layers increases at 440°C with Ge content in the film. It is presumed that the hydrogen desorption from the surface is the rate-limiting step, however, the enhancement in growth rate is comparatively suppressed and delayed.

Diamond growth on WC-Co substrates by hot filament chemical vapor deposition: Effect of filament–substrate separation

2011 ◽  
Vol 20 (5-6) ◽  
pp. 641-650 ◽  
Author(s):  
Qiuping Wei ◽  
Michael N.R. Ashfold ◽  
Yu. A. Mankelevich ◽  
Z.M. Yu ◽  
P.Z. Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Deposition Effect ◽  
Hot Filament

In Situ Contamination Control Investigation of Silicon Nitride Low Pressure Chemical Vapor Deposition Process in Vertical Thermal Reactors

1992 ◽  
Vol 259 ◽  
Author(s):  
Mansour Moinpour ◽  
K. Bohannan ◽  
M. Shenasa ◽  
A. Sharif ◽  
G. Guzzo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Contamination Control ◽  
Pressure Chemical

ABSTRACTA contamination control study of a Silicon Valley Group Thermco Systems Vertical Thermal Reactor(VTR) is presented. Trace elements of contaminants such as water vapor and oxygen have been shown to significantly affect the integrity of the silicon nitride film deposited by the low pressure chemical vapor deposition (LPCVD) process. This study documented the effects of process parameters on gaseous contamination levels, i.e., O2 and H2O vapor. Starting with a baseline process, the effects of an excursion of pre-deposition temperature ramp-up and stabilization condition, wafer load/unload and various post deposition conditions were explored. An axial profile of moisture and oxygen levels along the wafer load was obtained using Linde's Low Pressure Reactor Analysis(LPRAS) methodology. In addition, other process parameters such as gas flow rates during load and unload of wafers, pre-deposition N2 purge and process tube exposure time to ambient environment were- investigated. The wafers were analyzed for contaminants on the wafer surface or in the deposited silicon nitride film using FTIR and Auger spectroscopy techniques. They showed low levels of Si-O and no measurable Si-H or N-H bonds.

Numerical Model of Template-Based Chemical Vapor Deposition Processes to Manufacture Carbon Nanotubes for Biological Devices

2015 ◽  
Author(s):  
Yashar Seyed Vahedein ◽  
Michael G. Schrlau
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Process Parameters ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Carbon Nanostructures ◽  
Numerical Models ◽  
Fluid Dynamic ◽  
Low Cost ◽  
Chemical Vapor

Carbon nanotubes (CNTs) hold significant promise in the fields of efficient drug delivery and bio-sensing for disease treatment because of their unique properties. In our lab, single and arrayed CNT-tipped devices are manufactured by deposition of carbon on the heated surfaces of templates using chemical vapor deposition (Template-Based Chemical Vapor Deposition, TB-CVD). Experimental results show CNT formation in templates is controlled by TB-CVD process parameters such as flow rate and temperature. However, there is a need for a more comprehensive and low cost way to characterize the flow in the furnace in order to understand how process parameters may affect CNT formation. In this report, 2D and 3D numerical models with Quadrilateral grids were developed using computational fluid dynamic (CFD) commercial codes. Velocity patterns and flow regimes in the tube were compared with experimental data. In addition, statistical techniques were employed to study temperature profiles and velocity patterns in the furnace as a function of flow rate. The outcome of this work will help to elucidate the TB-CVD process and facilitate the efficient manufacture of carbon nanostructures from a variety of templates. The results are broadly applicable to the manufacturing of CNTs and other nanostructured devices used in energy and biomedical fields, including CNT-based devices used in biological applications.

Effects of Process Parameters on Deposition Rate of SiC Nanowires by Chemical Vapor Deposition

2020 ◽  
Vol 53 (7) ◽  
pp. 273-279
Author(s):  
Binbin Li ◽  
Haiquan Huang ◽  
Tao He ◽  
Bangxiao Mao ◽  
Xingbang Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Sic Nanowires
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