On-chip characterization of low-noise microstrip-coupled transition edge sensors

2009 ◽  
Vol 105 (8) ◽  
pp. 084509 ◽  
Author(s):  
Karwan Rostem ◽  
David J. Goldie ◽  
Stafford Withington ◽  
Dorota M. Glowacka ◽  
Vassilka N. Tsaneva ◽  
...  
2020 ◽  
Vol 91 (12) ◽  
pp. 123104
Author(s):  
E. A. Williams ◽  
S. Withington ◽  
D. J. Goldie ◽  
C. N. Thomas ◽  
P. A. R. Ade ◽  
...  

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.


2013 ◽  
Vol 23 (3) ◽  
pp. 2100904-2100904 ◽  
Author(s):  
L. Lolli ◽  
E. Taralli ◽  
M. Rajteri ◽  
T. Numata ◽  
D. Fukuda

2012 ◽  
Vol 167 (3-4) ◽  
pp. 248-253 ◽  
Author(s):  
D. J. Goldie ◽  
A. V. Velichko ◽  
D. M. Glowacka ◽  
S. Withington

2013 ◽  
Vol 176 (3-4) ◽  
pp. 356-362 ◽  
Author(s):  
S. J. Smith ◽  
J. S. Adams ◽  
S. R. Bandler ◽  
S. E. Busch ◽  
J. A. Chervenak ◽  
...  

2001 ◽  
Vol 11 (1) ◽  
pp. 751-754 ◽  
Author(s):  
T. Morooka ◽  
K. Tanaka ◽  
S. Nakayama ◽  
A. Nagata ◽  
K. Chinone ◽  
...  

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